You are here

Deep-Level-Free SiC Semi-Insulating Buffer Layers for High-Power RF Transistors 02-014A

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-02-P-0029
Agency Tracking Number: 02-0802
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
One Research Blvd., Suite 201B
Starkville, MS 39759
United States
DUNS: 602374951
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 John Glesener
 VP of Epi Products
 (662) 324-7607
Business Contact
 Kelly Cutshall
Title: Comptroller
Phone: (662) 324-7607
Research Institution

"SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This Phase I feasibility demonstration represents aninnovative breakthrough in deep-level-free semi-insulating (SI) buffer layers for high-performance, economical silicon carbide radio-frequency (RF) MEtal Semiconductor Field Effect Transistors (MESFET). Semi-insulating materials are widely used inelectronics, which is especially so in RF applications. SI materials are now commercially available in SiC as substrates with very high bulk resistivity. However, RF MESFET's are known to be susceptible to electrical instabilities arising from the deepenergy levels intentionally introduced into all currently practical SI material. The deep energy levels are necessary to compensate, meaning to electrically offset, the shallow doping impurities to produce very high electrical resistance. These same deeplevels produce trapping effects that are responsible for the electrical instabilities. Until now, it was not practical to create semi-insulating buffer layers by using "shallow" dopants of one type (say aluminum acceptors in SiC) to compensate shallowdopants of another type (say nitrogen donors in SiC) with sufficient precision to produce deep-level-free SI buffer layers. The approach developed by SemiSouth reduces or eliminates the electrical inst

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government