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Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-5429
Agency Tracking Number: 02-0119T
Amount: $70,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
One Research Blvd., Suite 201B
Starkville, MS 39759
United States
DUNS: 622392111
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Janna Dufrene
 Device Engineer
 (662) 324-7607
Business Contact
 Kelly Cutshall
Title: Controller
Phone: (662) 324-7607
Research Institution
 Mississippi State University
 J.B. Casady
Box 9571 - ECE Department, Hardy Road
Mississippi State, MS 39762
United States

 (662) 325-3669
 Nonprofit College or University

SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide earlyadaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.

* Information listed above is at the time of submission. *

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