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Highly Efficient MOSHFET Based X-band Transmitter-Switch Module

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-04-P-0150
Agency Tracking Number: B045-013-0270
Amount: $99,899.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA04-T013
Solicitation Number: N/A
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-08-17
Award End Date (Contract End Date): 2005-02-16
Small Business Information
1195 Atlas Road
Columbia, SC 29209
United States
DUNS: 135907686
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Yuriy Bilenko
 Senior Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
 University of South Carolina
 Steve Etheredge
Byrnes Building, 901 Sumter Street
Columbia, SC 29208
United States

 (803) 777-4457
 Nonprofit college or university

The output power and power added efficiency are the key performance parameters of modern transmitter/receiver (T/R) modules. The optimization of these parameters depends mostly on the RF characteristics of the active elements used in the T/R module output stages. GaAs FETs and HFETs that are currently used do not allow for high drain bias and large input signal swings. Power combining elements result in additional RF losses. Similar limitations are present for the T/R RF switches based on p-i-n diodes or GaAs transistors. GaN based HFETs allow for much higher single element output powers. However, the power added efficiency optimization is limited by severe increase in the gate leakage currents both under the reverse and forward biases. We propose to use our proprietary and patented III-Nitride based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor (MOSHFET) technology and develop high power added efficiency output stages integrated with RF switches. GaN has been under intense investigation in the last ten years due to its high breakdown field and high temperature operation. GaN transistors operating up to 600C is available in reports from various researchers.

* Information listed above is at the time of submission. *

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