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Large-Area Hybrid Substrates for HgCdTe Infrared Detectors

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15P7T-06-C-P004
Agency Tracking Number: A052-097-3738
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: A05-097
Solicitation Number: 2005.2
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-11-23
Award End Date (Contract End Date): 2006-05-15
Small Business Information
201 Circle Drive North, Unit # 102
Piscataway, NJ 08854
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Catherine Rice
 (732) 302-9274
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Research Institution

Mercury Cadmium Telluride, HgCdTe (MCT), is the most important material for modern infrared detectors and imaging arrays for wavelengths of strategic and tactical interest. Current substrates for HgCdTe detector deposition remain limited by high cost and severely limited available areas (CdZnTe bulk crystals), or by unacceptably large defect densities due to large material and thermal mismatch (Si wafers). New MCT substrate materials are desired with large areas (>300 cm2), low cost and good lattice and thermal match to the detector layer. In this SBIR project Structured Materials Industries, Inc. (SMI) proposes to develop a novel hybrid substrate material based on magnesium silicide (Mg2Si) layers on silicon substrates. Mg2Si has a good lattice match to MCT and has been shown in preliminary studies to have favorable thermal properties. In the proposed program SMI, working with a major manufacturer of MCT devices, will demonstrate the feasibility of utilizing Mg2Si/Si as a low cost, high-performance MCT substrate. In Phase I we will grow Mg2Si on silicon, characterize important material properties, and demonstrate single crystal deposition of MCT on the new substrates. Phase II will include optimization of the substrates, growth of MCT diode structures, and evaluation of IR detector performance. Commercial production of large area substrates and MCT devices will take place in Phase III.

* Information listed above is at the time of submission. *

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