INTRINSIC SEMICONDUCTOR CORP.

Company Information
Address 22660 Executive Drive, Suite 101
Dulles, VA, 20166


Information

DUNS: 115412160

# of Employees: 22


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Micropipe-free silicon carbide (SiC) substrates for high power (> 10kV) electronics

    Amount: $1,129,090.00

    Based on the successful proof of co

    SBIRPhase II2006Department of Defense
  2. Wide Bandgap Semiconductor Materials and Devices

    Amount: $1,351,440.00

    In this project, INTRINSIC proposes to demonstrate production quality 3-inch semi-insulating SiC wafers based on the successful results obtained in the Phase I effort. The objectives of the Phase II p ...

    SBIRPhase II2005Department of Defense Defense Advanced Research Projects Agency
  3. Ballistic Missile Innovative Radar and RF Products

    Amount: $749,990.00

    In this proposal, INTRINSIC proposes unique and innovative technologies that will impact next generation epitaxy and device development, leading to innovative radar and RF products. Specifically, base ...

    SBIRPhase II2005Department of Defense Missile Defense Agency
  4. Cost Effective Large Size Semi-Insulating Silicon Carbide (SiC) Ingots For Ballistic Missile Radar and RF Products

    Amount: $99,899.00

    In this proposal, INTRINSIC Semiconductor proposes unique and innovative semi-insulating (SI) SiC substrate process technologies that will impact next generation GaN and SiC device development, leadin ...

    SBIRPhase I2005Department of Defense Missile Defense Agency
  5. Ballistic Missile Innovative Radar and RF Products

    Amount: $749,776.00

    In this project, INTRINSIC proposes to demonstrate production quality 3-inch semi-insulating SiC wafers based on the successful results obtained in the Phase I effort. The objectives of the Phase II p ...

    SBIRPhase II2004Department of Defense Missile Defense Agency
  6. Wide Bandgap Semiconductor Materials and Devices

    Amount: $98,935.00

    Development of ultra pure silicon carbide (SiC) substrates that are electrically insulating will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique ...

    SBIRPhase I2004Department of Defense Air Force
  7. Wide Bandgap Semiconductor Materials and Devices

    Amount: $98,645.00

    Development of high quality 4H silicon carbide (SiC) substrates will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique for making such substrates. ...

    SBIRPhase I2004Department of Defense Air Force
  8. Ballistic Missile Innovative Radar and RF Products

    Amount: $99,484.00

    Development of ultra pure silicon carbide (SiC) substrates that are electrically insulating will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique ...

    SBIRPhase I2004Department of Defense Missile Defense Agency
  9. Development of Large Bulk Silicon Carbide Substrates From Halogenated Precursors

    Amount: $69,785.00

    INTRINSIC proposes bulk SiC single crystal growth via halogenated precursors for growing ultrahigh quality SiC materials. This is a unique approach which will provide benchmark SiC substrates in WBG t ...

    SBIRPhase I2004Department of Defense Navy
  10. Ballistic Missile Innovative Radar and RF Products

    Amount: $69,849.00

    Development of ultra pure silicon carbide (SiC) substrates is proposed. The Company has a unique and proprietary technique for making such substrates that will be used. Such substrates will be used in ...

    SBIRPhase I2003Department of Defense Missile Defense Agency
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