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Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 35787
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
12030 Sunrise Valley Drive, Suite 300
Reston, VA 20191
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrei A. Matsev
 (703) 476-2222
Business Contact
Phone: () -
Research Institution

Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to support next-generation devices, improvement to SiC wafer quality is essential. This Phase I SBIR proposes novel starting materials and unique process conditions for bulk SiC growth. Higher quality, larger area SiC than currently exists would provide a dramatic boost for the development of high power switches, high temperature electronics, and blue emitters for high density memory, chemical detection, and ultraviolet detectors.

* Information listed above is at the time of submission. *

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