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Optimal SiC Source Powder for Bulk SiC Growth

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 35792
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
12030 Sunrise Valley Drive, Suite 300
Reston, VA 20191
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrei A. Matsev
 (703) 476-2222
Business Contact
Phone: () -
Research Institution

The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which will in turn improve dramatically the economics of SiC commercial production. SiC remains unable to gain widespread acceptance in mainstream semiconductor device markets in part because of the high cost. That is, it is economically inefficient to fabricate devices from small area semiconductor materials. SiC will impact high power, high temperature devices.

* Information listed above is at the time of submission. *

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