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Novel Technology for Electronic Multilayer Devices

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32037
Amount: $99,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
3006 McLean CT
Blacksburg, VA 24061
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Carlos T.a. Suchicital
 (542) 231-7043
Business Contact
Phone: () -
Research Institution

A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus avoiding the need of traditional co-firing step at high temperature (e.g., 1200 C or higher). Minimal electrode and dielectric interaction is also expected, with the subsequent low leakage and high insulation resistance. The use of a high performance substrate material greatly enhances the reliability of these devices. Use of a wide selection of traditional and newly developed dielectrics ensure higher performance, at high temperatures and frequencies. These aspects of the process coupled with microfabrication techniques, ensure a high volumetric efficiency for these devices. This technology addresses the entire spectrum of multilayer ceramic capacitors and beyond, since other passive components fall under its manufacturing potential. The technology is readily incorporated by present solid state device fabrication processes. It will not require a large capital investment since today s fabs already have most of the required instrumentation on the line.

* Information listed above is at the time of submission. *

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