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High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-05-C-0096
Agency Tracking Number: A054-008-0227
Amount: $99,922.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A05-T008
Solicitation Number: N/A
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-08-15
Award End Date (Contract End Date): 2006-02-11
Small Business Information
7620 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: 876868647
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Amir Dabiran
 MBE Laboratory Manager
 (952) 934-2100
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Research Institution
 Ilesanmi Adesida
127 Micro and Nanotechnology , 208 North Wright Street
Urbana, IL 61801
United States

 (217) 333-3097
 Nonprofit college or university

A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Phase I program, device modeling, epitaxial growth, device processing and characterization will be done to fabricate a prototype AlGaN/GaN HFET operating in the impact ionization avalanche transit-time (IMPATT) mode.

* Information listed above is at the time of submission. *

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