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High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-05-C-0096
Agency Tracking Number: A054-008-0227
Amount:
$99,922.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
A05-T008
Solicitation Number:
N/A
Timeline
Solicitation Year:
2005
Award Year:
2005
Award Start Date (Proposal Award Date):
2005-08-15
Award End Date (Contract End Date):
2006-02-11
Small Business Information
7620 Executive Drive
Eden Prairie, MN
55344
United States
DUNS:
876868647
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
Yes
Principal Investigator
Name: Amir Dabiran
Title: MBE Laboratory Manager
Phone: (952) 934-2100
Email: dabiran@svta.com
Title: MBE Laboratory Manager
Phone: (952) 934-2100
Email: dabiran@svta.com
Business Contact
Name: Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
Name: UNIV. OF ILLINOIS, URBANA-CHAM
Contact: Ilesanmi Adesida
Address:
Phone: (217) 333-3097
Type: Nonprofit College or University
Contact: Ilesanmi Adesida
Address:
127 Micro and Nanotechnology , 208 North Wright Street
Urbana, IL
61801
United States
Phone: (217) 333-3097
Type: Nonprofit College or University
Abstract
A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Phase I program, device modeling, epitaxial growth, device processing and characterization will be done to fabricate a prototype AlGaN/GaN HFET operating in the impact ionization avalanche transit-time (IMPATT) mode.
* Information listed above is at the time of submission. *