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High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-06-C-0190
Agency Tracking Number: A054-008-0227
Amount:
$749,030.00
Phase:
Phase II
Program:
STTR
Solicitation Topic Code:
A05-T008
Solicitation Number:
N/A
Timeline
Solicitation Year:
2005
Award Year:
2006
Award Start Date (Proposal Award Date):
2006-10-03
Award End Date (Contract End Date):
2007-10-03
Small Business Information
7620 Executive Drive
Eden Prairie, MN
55344
United States
DUNS:
876868647
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
Yes
Principal Investigator
Name: Amir Dabiran
Title: MBE Laboratory Manager
Phone: (952) 934-2100
Email: dabiran@svta.com
Title: MBE Laboratory Manager
Phone: (952) 934-2100
Email: dabiran@svta.com
Business Contact
Name: Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
Name: UNIV. OF ILLINOIS, URBANA-CHAM
Contact: Ilesanmi Adesida
Address:
Phone: (217) 333-3097
Type: Nonprofit College or University
Contact: Ilesanmi Adesida
Address:
127 Micro and Nanotechnology
Urbana, IL
61801
United States
Phone: (217) 333-3097
Type: Nonprofit College or University
Abstract
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)
* Information listed above is at the time of submission. *
