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High-Performance Type II Superlattice LWIR Detector on Six Inch (6”) Si

Award Information
Agency: Department of Defense
Branch: Army
Contract: W909MY-08-C-0054
Agency Tracking Number: A062-122-2797
Amount: $773,407.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: A06-122
Solicitation Number: 2006.2
Timeline
Solicitation Year: 2006
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-09-25
Award End Date (Contract End Date): 2011-01-26
Small Business Information
7620 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: 876868647
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Aaron Moy
 Senior Research Engineer
 (952) 934-2100
 moy@svta.com
Business Contact
 Leslie Price
Title: Business Manager
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
N/A
Abstract

SVT Associates proposes an innovative 24-month Phase II program to further develop high performance Type-II superlattice focal plane arrays on Silicon substrates up to 6-inches in diameter. The Type-II superlattice material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Silicon is desired for its robust structure and large area, which could yield dies with lower unit costs. Silicon also offers integration with readout circuitry and MEMs technology. In the Phase I record high quality GaSb on Si was grown, using proprietary buffer techniques, with x-ray FWHM values comparable to that of bulk GaSb. Test Type-II superlattice layers grown on GaSb/Si showed equally impressive data. The Phase II program will refine the buffer technology and fabricate LWIR photodetectors on Si.

* Information listed above is at the time of submission. *

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