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Advanced High Current and Voltage SiC Diodes for Power Switching

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-03-M-0057
Agency Tracking Number: O022-0042
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
New Brunswick Tech Center, 100 Jersey Ave.Bldg D
New Brunswick, NJ 08901
United States
DUNS: 042068101
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Petre Alexandrov
 Senior Research Engineer
 (732) 565-9500
Business Contact
 Maurice Weiner
Title: Vice President
Phone: (732) 565-9500
Research Institution

"We propose to design, fabricate and develop an advanced SiC diode that can lead to (i) substantially reduced volume and weight of power systems, (ii) greatly expanded operating temperature range, and (iii) drastically improved power efficiency and enhancedradiation tolerance. In Phase I, we propose to compare and optimize different designs of the proposed SiC power diodes. We shall develop the critical processing technology to demonstrate the feasibility for the proposed SiC diode. We shall use 4H-SiC tofabricate and demonstrate the proposed diode up to 30 kW and prove that the proposed diode design is the best in comparison to conventional diodes. We shall, in Phase I, package the fabricated diodes for DC characterization to show its advantages over theconventional diodes. We shall also characterize the packaged SiC diodes in an inductively-loaded half-bridge inverter circuit to demonstrate its substantial switching advantages. In Phase II, we shall fully develop the processing technologies suitable forcommercial manufacturing in two voltage categories up to 225 kW for DOD and commercial applications. The fabricated diodes will be packaged with Si IGBTs and SiC power switches and evaluated by using an inverter system. High performance SiC diode for highfrequency, high power and high temperature applications including the Navy, the Air Force, and the Army high power motor control and power supply systems as well as numerous commerci

* Information listed above is at the time of submission. *

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