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Reliable, High Temperature Silicon Carbide MOSFET

Award Information
Agency: Department of Defense
Branch: Army
Contract: W56HZV-06-C-0080
Agency Tracking Number: A052-236-3254
Amount: $120,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: A05-236
Solicitation Number: 2005.2
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-12-15
Award End Date (Contract End Date): 2006-04-14
Small Business Information
New Brunswick Technology Center, 100 Jersey Ave.B
New Brunswick, NJ 08901
United States
DUNS: 042068101
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 X. Larry Li
 Sr. Research Engineer
 (732) 565-9500
Business Contact
 George Lin
Title: Vice President
Phone: (732) 565-9500
Research Institution

In response to SBIR topic A05-236, a proposal based on a novel concept in MOSFET design and fabrication is proposed to address the problems of (i) low channel mobility, (iii) low and unstable threshold voltage, and (iii) low gate oxide reliability under both high electric field and high temperature. Phase I will be focused on feasibility demonstration. A physics-based device model will be developed to predict the device performance including DC and switching characteristics as well as temperature dependence. A structure will be designed to target >1kV blocking voltage. High channel mobility fabrication processes will be developed and lateral MOSFETs will be fabricated to confirm the achievement of a larger than 100cm2/Vs channel mobility in Phase I. A batch of the proposed vertical power MOSFET will be fabricated in Phase I, aiming at demonstrating a record high performance, including blocking voltage >1KV, a forward current >3A and a specific on resistance <10m¦,cm2 with a threshold voltage >2V as well as a substantially improved threshold stability. Upon feasibility demonstration in Phase I, Phase II major R&D work will be focused on pushing up the MOSFET power capability, further reducing the specific on resistance, substantially improve threshold voltage stability, and drastically increase gate oxide reliability.

* Information listed above is at the time of submission. *

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