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Novel heterojunction diodes for High Power Electronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-M-0231
Agency Tracking Number: 01-0034T
Amount: $64,953.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
40 Amherst Avenue
Waltham, MA 02451
United States
DUNS: 025080123
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Philip Lamarre
 (781) 899-6924
Business Contact
 R. Morris
Title: Business official
Phone: (781) 899-6924
Research Institution
 Theodore Moustakas
Dept of EE, 8 St. Mary's St.
Boston, MA 02110
United States

 (617) 353-5430
 Nonprofit College or University

The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p type. GaN is generally grown on insulating sapphire substrates, which have poor thermal conductivity.Therefore, the sapphire substrates limit efficient thermal management in high power GaN-based devices. By growing GaN on SiC one can make heterojunctions with excellent thermal properties. Should the proposed research effort be funded, it will deliver anovel heterojunction devices suitable for a range of high-temperature, high-power applications. This device will out perform current state-of-the-art devices and will be manufactured reliably and inexpensively using standard semiconductor manufacturingtechniques. With Viatronix's ability to grow superior heterojunction devices we believe there are numerous commercial and military markets for this technology.

* Information listed above is at the time of submission. *

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