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GaN Power MISFETs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32059
Amount: $704,226.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6266 Marlborough Dr.
Goleta, CA 93117
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 David Kapolnek
 (805) 964-9419
Business Contact
Phone: () -
Research Institution
N/A
Abstract

WideGap Technology (WiTech) proposes to develop AlN/GaN MISFETs based on selectively grown GaN channels. The high breakdown field in GaN coupled with the extended region of high velocity at high electric fields makes GaN an ideal material for high microwave power applications. Using AlN as the gate insulator suppresses the gate leakage current and eliminates the problem of low schottky barrier height of metals on GaN. Additionally, the selective growth of the FET source and drain access regions reduces the access resistance without reducing the breakdown voltage. This approach also allows us to maintain the gate insulator technology with its associated advantages without compromising series resistances.

* Information listed above is at the time of submission. *

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