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Full Color Monolithic GaN-based LED's

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32048
Amount: $700,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6266 Marlborough Dr.
Goleta, CA 93117
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 David Kapolnek
 (805) 964-9419
Business Contact
Phone: () -
Research Institution
N/A
Abstract

WiTech (WideGap Technology) proposes to develop the monolithic fabrication of full color light emitting diodes (LED) based on group-III nitride materials. The main goal of phase I is the fabrication of super high efficiency LED's and LED arrays on a single chip using band gap engineering of (Al,Ga,In)N alloys and advanced techniques of nitride materials growth. These LED's will have enormous potential as white light source as we estimate energy efficiencies superior to tungsten light bulbs. During phase I we will develop selective area epitaxy as growth technique to monolithic synthesize material with bright multiple wavelength luminescence. The achievement of the phase I project will facilitate the phase II development of integrated red-green-blue LED's. The merit of the final devices will be the combination a compact light emitter design with the superior efficiency and output power of nitride LED's capable of emitting the full range of the visible light spectrum from red to blue and of generating white light. Due to the thermal and mechanical stability of nitride materials, the devices will reliably operate even under extreme thermal conditions in a hostile environment.

* Information listed above is at the time of submission. *

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