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Ultra Low Phase Noise GaAs MOSFETs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32046
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6266 Marlborough Dr.
Goleta, CA 93117
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Brian Thibeault
 (805) 964-9419
Business Contact
Phone: () -
Research Institution

WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise oscillators. On wafer measurements of phase noise at 4 GHz will be performed. In phase II, the development of hybrid oscillators in microwave fixtures based on the device technology developed in phase I will be pursued. This effort of WiTech leading to the development of GaAs LDD MOSFETs with Al(2)0(3) as the gate oxide can have far reaching consequences in producing low cost ultra low noise oscillators.

* Information listed above is at the time of submission. *

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