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High Operability HgCdTe Focal Plane Arrays on Si by Mitigation of Defects

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7673
Agency Tracking Number: B11A-002-0017
Amount: $99,981.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA11-T002
Solicitation Number: 2011.A
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-08-12
Award End Date (Contract End Date): N/A
Small Business Information
123 Case Circle
Ardmore, OK -
United States
DUNS: 159048698
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: Yes
Principal Investigator
 John Dinan
 Senior Research Scientist
 (703) 360-3872
Business Contact
 Todd Speaks
Title: Comptroller
Phone: (580) 657-2575
Research Institution
 Texas State University
 Thomas Myers
601 University Drive
San Marcos, TX 78666-
United States

 (512) 245-1839
 Nonprofit college or university

For HgCdTe infrared focal plane arrays fabricated on Si substrates, a model has recently been proposed to account for the disparity between the density of failed pixels and the density of dislocations that are present in the HgCdTe junction region. The model distinguishes between active and inactive dislocations and offers a hypothesis that dislocations are active only when they intersect particulates in the region near the Si wafer surface. We propose to test the validity of this hypothesis by separating the regions of high particulate density from regions of high dislocation density by depositing a homoepitaxial layer of Si. The particulates that lie at the surface of the Si wafer will not be able to interact with the dislocations that lie of the plane of the interface between Si layer and ZnTe buffer layer. We anticipate a low density of active dislocations in the HgCdTe and a low density of failed pixels in Si-based HgCdTe focal plane arrays. Operability values for these arrays should then meet systems"requirements.

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