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High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00024-12-P-4093
Agency Tracking Number: N121-071-1268
Amount: $80,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N121-071
Solicitation Number: 2012.1
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-06-05
Award End Date (Contract End Date): N/A
Small Business Information
1980 Olivera Ave Suite D
Concord, CA -
United States
DUNS: 149397015
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jeff Brown
 Senior Scientist
 (925) 798-5770
Business Contact
 Mike McFarland
Title: Principal Scientist
Phone: (925) 798-5770
Research Institution

This purpose of this project is to develop high-k dielectrics and processes suitable for use in Metal-Insulator-Metal capacitors for incorporation into GaN Monolithic Microwave Integrated Circuits. An energetic deposition process will be used that has been demonstrated to produce high quality, high-k films ideally suited for this application. The proposed deposition process is superior to other Physical Vapor Deposition (PVD) processes and to Atomic Layer Deposition. This deposition process allows virtually any arbitrary metal oxide to be easily deposited with high quality allowing different high-k dielectrics to be straightforwardly evaluated. The coatings have high adhesion, are pin-hole and defect free, and contain no impurities from the deposition process. Acree Technologies Incorporated"s experience in the development of innovative coating processes makes us uniquely suited for the successful realization of the desired film, process and equipment for integration into existing foundries.

* Information listed above is at the time of submission. *

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