In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaN

This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as substrate temperature and growth rate, which will lead to more robust, producible HVPE GaN growth processes, and in turn increase large area wafer yield and boule thicknesses. The in-situ monitoring devices which will be used are a Laytec EpiTT 3-wavelength pyrometer to directly measure substrate temperature throughout the GaN HVPE process, and a deep UV source/spectrometer that will be used to monitor the GaCl precursor concentration above the growing GaN surface. These tools will help establish a robust, producible GaN HVPE process capable of producing large area bulk wafers and boules of thicknesses 1 cm and greater.