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In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaN

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7399
Agency Tracking Number: B09B-001-0060
Amount: $99,969.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA09-T001
Solicitation Number: 2009.B
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-05-03
Award End Date (Contract End Date): 2010-11-02
Small Business Information
8829 Midway West Road
Raleigh, NC 27617
United States
DUNS: 020080607
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Metzger
 Chief Engineer
 (919) 789-8880
Business Contact
 Keith Evans
Title: CEO
Phone: (919) 789-8880
Research Institution
 University of Nevada at Las Vegas
 Rama Venkat
4505 S Maryland Pkwy
Las Vegas, NV 89183
United States

 (702) 895-1094
 Nonprofit College or University

This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as substrate temperature and growth rate, which will lead to more robust, producible HVPE GaN growth processes, and in turn increase large area wafer yield and boule thicknesses. The in-situ monitoring devices which will be used are a Laytec EpiTT 3-wavelength pyrometer to directly measure substrate temperature throughout the GaN HVPE process, and a deep UV source/spectrometer that will be used to monitor the GaCl precursor concentration above the growing GaN surface. These tools will help establish a robust, producible GaN HVPE process capable of producing large area bulk wafers and boules of thicknesses 1 cm and greater.

* Information listed above is at the time of submission. *

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