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KYMA TECHNOLOGIES, INC.

Company Information
Address
8829 MIDWAY WEST RD
RALEIGH, NC 27617-4606
United States


http://www.kymatech.com

Information

UEI: GDV6R1VLRVN7

# of Employees: 11


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. HVPE-Based Gallium Oxide Epiwafer Development

    Amount: $1,250,000.00

    Gallium oxide is poised to play an important role in next generation power and microwave electronics. Significant efforts by the Air Force to bolster the domestic substrate supply have been largely su ...

    SBIRPhase II2023Department of Defense Air Force
  2. Radiation-Tolerant Vertical GaN Diodes

    Amount: $160,000.00

    In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing GaNshy; materials and domestically produced, chemically pure halide va ...

    SBIRPhase I2022National Aeronautics and Space Administration
  3. Rad-Hard Ga2O3 Diodes

    Amount: $797,890.00

    In this Phase II program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing gallium oxide (Ga2O3) materials and domestically produced, chemically ...

    SBIRPhase II2022National Aeronautics and Space Administration
  4. Low-Cost Manufacturing of High Quality GaN Substrates

    Amount: $149,999.00

    The outstanding materials properties of wide bandgap semiconductor materials, and of gallium nitride (GaN) in particular, provide great promise to enable highly efficient power electronics devices, hi ...

    SBIRPhase I2022Department of Defense Missile Defense Agency
  5. High Responsivity Optical GaN Switch

    Amount: $749,997.00

    This effort seeks to develop a novel wide bandgap photoconductive semiconductor switch capable of operating at >150 deg C that can hold off 1200–2000 V while supplying 10–120 A for applications in ...

    SBIRPhase II2022Department of Defense Air Force
  6. Rad-Hard Ga2O3 Diodes

    Amount: $124,993.00

    In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing Ga2O3shy; materials and domestically produced, chemically pure halide ...

    SBIRPhase I2021National Aeronautics and Space Administration
  7. Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers

    Amount: $750,000.00

    Gallium nitride (GaN) represents a critical semiconductor technology for a number of defense and non-defense applications such as advanced radar systems, missile guidance, satellite communications, GP ...

    SBIRPhase II2021Department of Defense Air Force
  8. Integrated Optical Cascode Configuration for Vertical GaN Power Transistors

    Amount: $749,996.00

    Kyma Technologies will advance the state of the art in GaN-based vertical power switching devices by incorporating an integrated, optically triggered cascode element to a field effect transistor devic ...

    SBIRPhase II2021Department of Defense Air Force
  9. Integrated Optical Cascode Configuration for Vertical GaN Power Transistors

    Amount: $49,996.00

    Kyma will develop a novel vertical GaN power device with an integrated, optically-controlled gate to realize an EMI-immune device, the GaN power Optical-Cascode FET (OC-FET). The work will consist of ...

    SBIRPhase I2021Department of Defense Air Force
  10. High Performance Permanent Photocathodes

    Amount: $200,000.00

    High performance, high brightness photocathodes are a critical enabling technology for ultrafast, high brightness DOE electron accelerators, such as the X-ray free electron laser FEL) at SLAC and MaRI ...

    SBIRPhase I2020Department of Energy
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