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KYMA TECHNOLOGIES, INC.

Company Information
Address
8829 MIDWAY WEST RD
RALEIGH, NC 27617-4606
United States


http://www.kymatech.com

Information

UEI: GDV6R1VLRVN7

# of Employees: 11


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Rad-Hard Ga2O3 Diodes

    Amount: $124,993.00

    In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing Ga2O3shy; materials and domestically produced, chemically pure halide ...

    SBIRPhase I2021National Aeronautics and Space Administration
  2. Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers

    Amount: $750,000.00

    Gallium nitride (GaN) represents a critical semiconductor technology for a number of defense and non-defense applications such as advanced radar systems, missile guidance, satellite communications, GP ...

    SBIRPhase II2021Department of Defense Air Force
  3. Integrated Optical Cascode Configuration for Vertical GaN Power Transistors

    Amount: $749,996.00

    Kyma Technologies will advance the state of the art in GaN-based vertical power switching devices by incorporating an integrated, optically triggered cascode element to a field effect transistor devic ...

    SBIRPhase II2021Department of Defense Air Force
  4. Integrated Optical Cascode Configuration for Vertical GaN Power Transistors

    Amount: $49,996.00

    Kyma will develop a novel vertical GaN power device with an integrated, optically-controlled gate to realize an EMI-immune device, the GaN power Optical-Cascode FET (OC-FET). The work will consist of ...

    SBIRPhase I2021Department of Defense Air Force
  5. High Performance Permanent Photocathodes

    Amount: $200,000.00

    High performance, high brightness photocathodes are a critical enabling technology for ultrafast, high brightness DOE electron accelerators, such as the X-ray free electron laser FEL) at SLAC and MaRI ...

    SBIRPhase I2020Department of Energy
  6. Vertical GaN Switches for EV

    Amount: $200,000.00

    Advancement of the performance and reliability of power electronics utilizing wide bandgap materials has been identified as a key technical target by the US DRIVE partnership to meet 2025 roadmap targ ...

    SBIRPhase I2020Department of Energy
  7. High Responsivity Lateral GaN Switch

    Amount: $150,000.00

    With its wide band gap allowing high voltages, high currents, and high temperatures, compensated gallium nitride (GaN) is a good candidate for constructing optically triggered switches that can operat ...

    SBIRPhase I2020Department of Defense Air Force
  8. Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers

    Amount: $50,000.00

    Gallium nitride (GaN) epiwafers are used to make RF microwave monolithic integrated circuits (MMICs) in military radar systems, LEDs in TVs and solid state lighting, and many other applications. Kyma ...

    SBIRPhase I2020Department of Defense Air Force
  9. Next-Generation, Power-Electronics Materials for Naval Aviation Applications

    Amount: $732,316.00

    This program will further the development of large area freestanding GaN substrates (150mm or greater) and develop a bulk GaN substrate characterization protocol to help reduce the variability in GaN ...

    STTRPhase II2020Department of Defense Navy
  10. Development of High Power High Speed WBGS Photoconductive Semiconductor Switch (PCSS) Devices

    Amount: $50,000.00

    This work is focused on identifying the tradeoffs associated with modifying Kyma’s existing photoconductive semiconductor switch (PCSS) technology in order to tailor the technology for applicat ...

    SBIRPhase I2019Department of Defense Air Force
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