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KYMA TECHNOLOGIES, INC.
UEI: GDV6R1VLRVN7
# of Employees: 11
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Low-Cost Manufacturing of High Quality GaN Substrates
Amount: $149,999.00The outstanding materials properties of wide bandgap semiconductor materials, and of gallium nitride (GaN) in particular, provide great promise to enable highly efficient power electronics devices, hi ...
SBIRPhase I2022Department of Defense Missile Defense Agency -
High Responsivity Optical GaN Switch
Amount: $749,997.00This effort seeks to develop a novel wide bandgap photoconductive semiconductor switch capable of operating at >150 deg C that can hold off 1200–2000 V while supplying 10–120 A for applications in ...
SBIRPhase II2022Department of Defense Air Force -
Radiation-Tolerant Vertical GaN Diodes
Amount: $160,000.00In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing GaNshy; materials and domestically produced, chemically pure halide va ...
SBIRPhase I2022National Aeronautics and Space Administration -
Rad-Hard Ga2O3 Diodes
Amount: $797,890.00In this Phase II program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing gallium oxide (Ga2O3) materials and domestically produced, chemically ...
SBIRPhase II2022National Aeronautics and Space Administration -
Rad-Hard Ga2O3 Diodes
Amount: $124,993.00In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing Ga2O3shy; materials and domestically produced, chemically pure halide ...
SBIRPhase I2021National Aeronautics and Space Administration -
Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers
Amount: $750,000.00Gallium nitride (GaN) represents a critical semiconductor technology for a number of defense and non-defense applications such as advanced radar systems, missile guidance, satellite communications, GP ...
SBIRPhase II2021Department of Defense Air Force -
Integrated Optical Cascode Configuration for Vertical GaN Power Transistors
Amount: $749,996.00Kyma Technologies will advance the state of the art in GaN-based vertical power switching devices by incorporating an integrated, optically triggered cascode element to a field effect transistor devic ...
SBIRPhase II2021Department of Defense Air Force -
Integrated Optical Cascode Configuration for Vertical GaN Power Transistors
Amount: $49,996.00Kyma will develop a novel vertical GaN power device with an integrated, optically-controlled gate to realize an EMI-immune device, the GaN power Optical-Cascode FET (OC-FET). The work will consist of ...
SBIRPhase I2021Department of Defense Air Force -
High Performance Permanent Photocathodes
Amount: $200,000.00High performance, high brightness photocathodes are a critical enabling technology for ultrafast, high brightness DOE electron accelerators, such as the X-ray free electron laser FEL) at SLAC and MaRI ...
SBIRPhase I2020Department of Energy -
Vertical GaN Switches for EV
Amount: $200,000.00Advancement of the performance and reliability of power electronics utilizing wide bandgap materials has been identified as a key technical target by the US DRIVE partnership to meet 2025 roadmap targ ...
SBIRPhase I2020Department of Energy
