You are here

Two-Dimensional MoS2 Transistors for Low-Power RF Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-14-P-0013
Agency Tracking Number: A14A-008-0047
Amount: $149,309.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A14A-T008
Solicitation Number: 2014.A
Solicitation Year: 2014
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-08-06
Award End Date (Contract End Date): 2015-02-07
Small Business Information
18008 Cottage Garden Dr., 200
Germantown, MD -
United States
DUNS: 078386164
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Baomei Wen
 Senior Device Engineer
 (301) 257-6756
Business Contact
 Abhishek Motayed
Title: Chief Technology Officer
Phone: (301) 257-6756
Research Institution
 George Mason University
 Donna Senator
Office of Sponsored Program 4400 University Drive, MSN 4C6
Fairfax, VA 22030-
United States

 (703) 993-1505
 Nonprofit College or University

The proposed project will demonstrate high-frequency (0.5 5 GHz) operation of novel 2-dimensional semiconductor molybdinum disulphide (MoS2) based field-effect transistors. Our project will focus on innovative growth startegies for large-area growth of MoS2 along with novel device design methodologies which will consider the tradeoffs between monolayer and multilayer device designs for high-frequency applications. Although in recent years studies have indicated exciting possibilities of the 2-D materials, significant challenges remain in realizing useful devices. Most of the efforts concentrate only on the superior properties of the 2-D channel material. The device performance in 2D materials will be largely dominated by contacts and the interfaces. The issue of device engineering and design using these 2D materials should include detailed interface physics and role of contact parasitics. In collaboration with George Mason University, N5 will develop large-area growth strategies, understanding the device physics and engineering including the role of interface transport with detailed characterization of defects and the effect of contact properties. The end goal of this project is to demonstrate the feasibility of high-frequency transistors realized using MoS2 materials. Key components of our approach are: 1) large-area growth of mono and multi-layer MoS2 layers using chemical vapor deposition methods with emphasis on large-area uniformity and reproducibility, 2) fabrication of large-periphery RF devices utilizing only conventional fabrication methods using contact or projection lithography for high throughput device manufacturing, and 3) high-frequency operation through innovations in source/drain contact engineering, gate dielectrics, and novel concept of"layer engineering".

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government