You are here

Low Power Monolayer MoS2 Transistors for RF Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-14-P-0030
Agency Tracking Number: A14A-008-0176
Amount: $150,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A14A-T008
Solicitation Number: 2014.A
Timeline
Solicitation Year: 2014
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-08-25
Award End Date (Contract End Date): 2015-02-28
Small Business Information
15844 Garrison Circle
Austin, TX -
United States
DUNS: 078702042
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Rajesh Rao
 Co-Founder and CTO
 (512) 287-9732
 rajesh.rao@appliednoveldevices.com
Business Contact
 Leo Mathew
Title: Co-Founder and CEO
Phone: (512) 775-7991
Email: leomathew@appliednoveldevices.com
Research Institution
 University of Texas, Austin
 Sanjay Banerjee
 
10100 Burnet Road, Bldg 160 J. J. Pickle Research Campus
Austin, TX 78758-
United States

 (512) 471-6730
 Nonprofit college or university
Abstract

The objective of this proposal is to demonstrate the feasibility of producing large area, single crystal monolayer Molybdenum disulfide (MoS2) for high frequency applications. In order to be able to achieve this aim, it is necessary to work on three main components: (a) the channel material itself, (b) the gate dielectric and (c) the drain/ source contacts to the channel material. This work proposes to use optimization of chemical vapor deposition (CVD) growth parameters for obtaining large domain single layer MoS2 on device quality substrates, use of hexagonal Boron Nitride (h-BN) as a dielectric and its growth directly on Si-SiO2 to remove the need for any transfer before MoS2 growth and the use of highly conductive"defects"on the MoS2 surface to enhance charge injection in the metal- semiconductor interface.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government