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Conformal Passivation of High Aspect Ratio HgCdTe Surfaces by ALD Using a Novel Cd-Precursor

Award Information
Agency: Department of Defense
Branch: Army
Contract: W909MY-15-C-0002
Agency Tracking Number: A2-5750
Amount: $999,993.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A13A-T013
Solicitation Number: 2013.0
Solicitation Year: 2013
Award Year: 2015
Award Start Date (Proposal Award Date): 2015-04-17
Award End Date (Contract End Date): 2017-04-16
Small Business Information
44 Hunt Street
Watertown, MA 02472-4699
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bhandari
 Senior Scientist
 (617) 668-6922
Business Contact
 Joanne Gladstone
Title: DR
Phone: (617) 668-6845
Research Institution
 Illinois Institute of Technology
 Adam Hock PhD
201 S. Dearborn Street
Chicago, IL 60616-2852
United States

 (312) 567-3388
 Nonprofit College or University

"HgCdTe is the material of choice for high performance infrared red focal plane arrays (IRFPA) used in militarys night vision systems. One of the major problems IRFPA manufacturers face is the ineffective passivation of the highly reticulated HgCdTe detector surfaces, which results in poor performance. Furthermore, newly evolved FPA technology requires the creation of much challenging high-aspect-ratio geometries. Thus, equally important to the passivation development is the conformal coating technology on high-aspect-ratio surfaces. Thus, the goal of the proposed program is to develop new precursors and perform well-defined ALD passivation on HgCdTe focal plane arrays. The novel metalorganic precursors that were developed in the Phase I demonstrate physical and chemical properties consistent with the requirements of atomic layer deposition at low temperature. The proposed passivation material and technique using highly conformal atomic layer deposition (ALD) will allow the DOD to develop high-performance infrared focal plane array detectors with complex morphologies that can operate under wider operating conditions, using lower-cost processes. To ensure ideal device performance, the passivation technology will be optimized to yield uniform, conformal, pinhole-free and stoichiometric composition processed at low substrate temperatures, which will provide robust electrical and physical barrier properties. "

* Information listed above is at the time of submission. *

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