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Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-15-C-0144
Agency Tracking Number: N13A-025-0254
Amount: $528,547.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: N13A-T025
Solicitation Number: 2013.0
Timeline
Solicitation Year: 2013
Award Year: 2015
Award Start Date (Proposal Award Date): 2015-09-15
Award End Date (Contract End Date): 2017-03-14
Small Business Information
15 Amherst Road
Belmont, MA 02478
United States
DUNS: 078360128
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ling Xia
 Director of Device Reliab
 (617) 990-7466
 ling@gantechnology.com
Business Contact
 Natalia Palacios
Title: Technical Point of Contact
Phone: (617) 304-4254
Email: natasha@gantechnology.com
Research Institution
 MIT
 Benjamin Snedeker
 
77 Massachusetts Ave.
Cambridge, MA 02139
United States

 (617) 452-2882
 Nonprofit College or University
Abstract

The goal of Phase II of this STTR project is to optimize the GaN transistor obtained in Phase I to deliver a 100-W power amplifier with 90% power added efficiency (PAE) at 1 GHz. Emphasis will be put on optimizing output capacitances, improving gate control and further improving epitaxial wafers. We will finalize our design of power amplifier circuit module based on the improved device and our proprietary device models. Device reliability and scalability in output power will be extensively studied.Upon the completion of Phase II base period, we expect to deliver a working prototype of this ultra-high-efficiency PA assembled on a test board. The technology prototype is expected to open up the possibility to replace vacuum-tube-based power amplifiers with solid-state power amplifiers. Such a case will impact a broad range of applications including phase-array radar systems, communication systems, energy transfer modules, and imaging modules in medical equipment. At the end of this project, we will be well positioned to initiate a unique product line that leads the application of solid-state device in ultra-high efficiency power amplifiers for both military and commercial markets.

* Information listed above is at the time of submission. *

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