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Symetrix Corporation

Company Information
Address
5555 TECH CENTER DR STE 100
COLORADO SPRINGS, CO 80919-2333
United States


http://symetrixcorp.com
Information

UEI: ZK2MYVUW7TM8

# of Employees: 9
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 9

  1. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $247,107.00

    WE PROPOSE AN EXTENSIVE STUDY OF MATERIALS AND DEPOSITION TECHNIQUES SUITABLE FOR FABRICATION OF HIGH-DIELECTRIC CONSTANT THIN-FILM DRAM (DYNAMIC RANDOM ACCESS MEMORY) CAPACITORS. THESE CAPACITORS WIL ...

    SBIRPhase II1993Department of Defense Defense Advanced Research Projects Agency

  2. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $49,162.00

    N/A

    SBIRPhase I1991Department of Defense Defense Advanced Research Projects Agency

  3. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $476,000.00

    A SYSTEMATIC STUDY OF THE SPUTTERING TECHNOLOGY AND INTERFACE METALLURGY FOR LEAD ZIRCONATE TITANTE/PLATIUM/GALLIUM-ARSENIDE (PZT/PT/GAAS) IS BEING UNDERTAKEN THAT IS EXPECTED TO PERMIT LARGE, RAD-HAR ...

    SBIRPhase II1990Department of Defense Missile Defense Agency

  4. NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

    Amount: $50,000.00

    IF THE NEW THIN-FILM PROTOTYPE FERROELECTRIC MEMORIES ARE TO BE NECCESSFULLY INTEGRATED ONTO GAAS CIRCUITRY, IT WILL BE NECESSARY TO DEVELOP RAPID THERMAL PROCESSING TECHNIQUES TO PROTECT THE GAAS JUN ...

    SBIRPhase I1989Department of Defense Defense Advanced Research Projects Agency

  5. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $449,000.00

    MEASUREMENTS OF THE HYSTERESIS CHARACTERISTICS AND SWITCHING KINETICS WILL BE MADE ON THREE FERROELECTRIC THIN-FILM MEMORY MATERIALS: LEAD GERMANATE WITH 0 TO 10% SILICON (PB[5]GE[3-X]SI[X]O[11]); BIS ...

    SBIRPhase II1988Department of Defense Navy

  6. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $500,000.00

    WE HAVE FABRICATED POTASSIUM NITRATE FERROELECTRIC MEMORIES IN THE FORM OF 32 X 32 CELL ARRAYS ON GLASS SUBSTRATES (1KB) AND MEASURED THEIR SWITCHING TIMES AND READ WRITE CHARACTERISTICS. THE THINNEST ...

    SBIRPhase II1988Department of Defense Navy

  7. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $49,992.00

    N/A

    SBIRPhase I1988Department of Defense Missile Defense Agency

  8. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $49,459.00

    N/A

    SBIRPhase I1987Department of Defense Navy

  9. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $49,459.00

    N/A

    SBIRPhase I1987Department of Defense Navy
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