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Development for Radiation Hardened Applications of Advanced Electronics Materials, Processes, and Devices

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7401
Agency Tracking Number: B09B-006-0071
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA09-T006
Solicitation Number: 2009.B
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-05-03
Award End Date (Contract End Date): 2010-11-02
Small Business Information
240 W. Elmwood Dr. Suite 2010
Dayton, OH 45459
United States
DUNS: 141943030
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Todd Grimes
 Project Manager
 (937) 433-2886
Business Contact
 V. Nagarajan
Title: President
Phone: (937) 433-2886
Research Institution
 Purdue University
 Kaushik Roy
Sponsored Program Services 610 Purdue Mall, Hovde Hall
West Lafayette, OH 47907
United States

 (765) 494-2361
 Nonprofit College or University

The Missile Defense Agency (MDA) seeks technical investigations related to the development and application of advanced electronic materials, processes, and devices to meet its need for radiation hardened, high performance electronics for critical space and missile applications. With the advent of smaller transistor dimensions and reductions in price per bit, significant changes in materials and processes have been required to achieve these goals. More recent advancements have allowed semiconductor technology to push further into the nanoscale regime. However, these advancements are becoming more difficult and at an increased cost. As a result, new advanced materials, processes, and devices are required to continue the trend for higher functional density and decreased cost in terms of function. As result, we are planning to demonstrate our methods for increasing radiation hardness in the development of radiation hardened (rad-hard) SRAM architecture. The radiation hardened SRAM to be designed will provide inherent protection from TID, and immunity against single event latch up, and single event effect.

* Information listed above is at the time of submission. *

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