Company
Portfolio Data
Back to Company SearchNOMIS POWER CORPORATION
UEI: MQKPC5MHRN99
Number of Employees: 2
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
SBIR/STTR Involvement
Year of first award: 2021
5
Phase I Awards
1
Phase II Awards
20%
Conversion Rate
$1,017,410
Phase I Dollars
$299,699
Phase II Dollars
$1,317,109
Total Awarded
Awards
Full-SiC 3.3 kV, 200 A Half-Bridge Power Module Demonstrating Resilient Performance and Robust Multi-Layer Power Delivery
Amount: $206,500 Topic: C58-22b
Existing power semiconductor technologies are fostering the adoption of electrification across a wide range of applications, from transportation to power generation. However, silicon-based power modules are suboptimal due to their low power densities and the low switching frequency capability of existing Si insulated-gate bipolar transistors (IGBTs). By replacing Si with Silicon Carbide (SiC) power modules, it is possible to achieve higher switching frequencies (e.g. 10 kHz versus 1 kHz for Si), and higher power densities while achieving greater efficiencies. In this Phase I project, NoMIS will, in collaboration with the National Renewable Energy Laboratory, design, simulate, and prototype a 3.3 kV, 200 A half-bridge SiC power module. Using optimized substrates and die attachment methodologies, the SiC power module will be assembled and tested to confirm simulations. Lastly, a cost analysis to project COGS at small and large scales will be conducted to ensure that pricing targets can and will be met. At the end of Phase II, NoMIS is targeting the production of a fully packaged and ready-to-integrate module for $6.95/Amp ľ half the cost of current commercial-off-the-shelf solutions. At large scales in 150 mm SiC foundries, NoMIS is targeting <$5/Amp to achieve cost competitiveness with Si IGBT power modules while providing greater benefits. Vital to realizing this vision, NoMIS aims to reduce the junction-to-case thermal resistance by as much as 25% by utilizing copper sintering die attachment between NoMIS SiC power device chips and an organic-based multi-layer substrate, without sacrificing partial discharge inception voltage (PDIV) inside the power module. The proposed packaging technology will allow for cheaper, more robust, and more easily manufacturable power modules, facilitating adoption by remaining compatible with industry-standard packaging processes and relying on an in-house supply of SiC power devices. NoMIS Powerĺs Endura 3300-series SiC MOSFETs have longer short-circuit withstand time (>10 µs), high gate oxide reliability, reduced body diode degradation, and area-efficient edge termination without sacrificing SiC MOSFET on-resistance when compared to other vendors. Endura-series SiC power devices owe their ruggedness to proprietary burn-in and screening procedures that ensure proper device binning prior to assembly for a more reliable power module. The technology developed in this project has ramifications in two primary applications that are being targeted by NoMIS and our customers: EV fast chargers and solid-state transformers. EV fast chargers that are directly driven from MV AC grid voltages (e.g. 13.8 kV) have much lower grid charging currents and hence lower energy losses compared to chargers connected from the 480 V AC mains, as conduction losses from cabling can be drastically minimized. Moreover, with the advent of vehicle-to-grid (V2G) technologies, SiC-based technologies are the ideal choice for bidirectional converters at these medium voltages due to the higher efficiencies and higher switching frequencies that SiC enables, bringing with it the additional advantages of smaller passive components and higher power densities. Complementarily, to support such EV fast chargers, the electrical grid itself will need to make use of more robust solid-state transformers to provide sufficient power processing capability while surviving power demand surges and integrating low and high-voltage networks.
Tagged as:
STTR
Phase I
2024
DOE
Highly integrated, low cost SiC power modules with modified substrates for high performance and ease of manufacturing
Amount: $200,000 Topic: C54-19c
The global adoption of electric vehicles (EV) will require a rapid deployment of EV charging stations. Similarly, the expanding deployment of renewable energy resources will necessitate power conversion infrastructure to interface with the electric grid. Therefore, in order to facilitate these critical technologies, and meet the major decarbonization goals set by the U.S. government and others around the globe, NoMIS Power is working to accelerate the clean tech revolution in the 21st Century by enabling the widespread adoption of silicon carbide (SiC) devices in the global power management industry. And, in the process, help develop an indigenous U.S.-based supply chain for this critical technology, such as EV fast chargers, solid-state transformers and DC protection equipment, HVDC converters, and locomotive traction and industrial motor drives. Through this U.S. Department of Energy SBIR funding, NoMIS Power intends to bring to market within two years SiC power modules at less than half the cost of today’s commercial-off-the-shelf-solutions. The two year goal will be achieved by sourcing chips from U.S. suppliers, in-house development of innovative SiC device and module design that will lower manufacturing costs and meet IEC standards, and power module manufacturing in the U.S., followed by the incorporation of supporting technical advancements and rigorous testing by our team members at leading U.S. research institutions. During Phase I, the team will develop an electric-field grading approach by comparing materials and electro-physical topologies aimed at reducing thermal resistance, while simultaneously increasing high voltage withstand capability, for improved reliability. The proposed packaging technology will allow for cheaper, more robust, and more easily manufacturable SiC power modules, facilitating adoption by remaining compatible with industry standard packaging processes.
Tagged as:
SBIR
Phase I
2022
DOE
SBIR Phase I:Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices
Amount: $255,909 Topic: PM
The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market.The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Tagged as:
SBIR
Phase I
2022
NSF
6.5 kV, 100 A SiC Power Module Technology to Meet 21st Century Energy Demands
Amount: $299,699 Topic: T
NoMIS Power Group is working to accelerate the clean tech revolution in the 21st Century by enabling the widespread adoption of SiC devices in the global power management industry. And, in the process, help develop an indigenous US-based supply chain for this critical technology, such as EV fast chargers, solid-state transformers and DC protection equipment, HVDC converters, and locomotive traction motor drives. Through this ARPA-E SEED SBIR funding, NoMIS Power Group intends to bring to market within two years SiC power semiconductor devices and modules at less than half the cost of today’s commercial-off-the-shelf-solutions. The two year goal will be achieved by sourcing chips from US suppliers, in-house development of an innovative SiC module design, and outsourced module manufacturing in the US, followed by rigorous testing by our team at leading US research institutions.
Tagged as:
SBIR
Phase II
2021
DOE
ARPA-E
Manufacturing Platform for High-Temperature CMOS ICs on SiC
Amount: $156,403 Topic: DMEA211-001
This project aims to develop high-temperature (> 300°C) operational dielectrics for SiC CMOS integrated circuits (ICs) technologies in a production-grade fabrication facility in the U.S. All outcomes of this project will directly benefit future implementations of various kinds of high-temperature electronics for defense applications.Increasingly, the development of SiC CMOS-based ICs that can operate at high temperatures is at the forefront of SiC-based device research. Despite many technical barriers to achieving high temperature operation of SiC CMOS ICs, it is paramount that significant effort be devoted to the development of reliable dielectrics and credible fabrication sources for high-temperature SiC CMOS ICs. Benefiting from the current effort on SiC SMART IC (funded by ARPA-e, issues for SiC CMOS-based circuits when operating at high temperatures will be identified in the beginning of the project. The methodology for pursuing the proposed solutions in this project are unique in that: 1) New process schemes or methodologies will be developed at the proposed production-grade fabrication facility from the beginning, as solutions developed in small-scale cleanroom environments are often difficult to implement successfully in a volume manufacturing facility due to incompatibility; 2) Advanced capability and tool variety at the proposed facility will ensure successful demonstration of newly proposed process technology; 3) High-temperature operations of SiC CMOS-based exemplary circuits will be demonstrated as a goal of this project; 4) While focused on gate dielectric (µn > 50 cm2/V-s, µp > 10 cm2/V-s, Vth shift < ± 0.5 V) and interlayer dielectric (ILD) processes, other process-related developments such as ohmic contacts and packaging of the ICs will also be pursued for the functional demonstration of high-temperature SiC CMOS FETs; 5) The process baseline for SiC CMOS that is being established in an already existing project will be the basis of the proposed research, which will reduce effort/time for this project, ensuring the chance of success.
Tagged as:
SBIR
Phase I
2021
DOD
DMEA
6.5 kV, 100 A SiC Power Module Technology to Meet 21st Century Energy Demands
Amount: $198,598 Topic: T
NoMIS Power Group is working to accelerate the clean tech revolution in the 21st Century by enabling the widespread adoption of SiC devices in the global power management industry. And, in the process, help develop an indigenous US-based supply chain for this critical technology, such as EV fast chargers, solid-state transformers and DC protection equipment, HVDC converters, and locomotive traction motor drives. Through this ARPA-E SEED SBIR funding, NoMIS Power Group intends to bring to market within two years SiC power semiconductor devices and modules at less than half the cost of today’s commercial-off-the-shelf-solutions. The two year goal will be achieved by sourcing chips from US suppliers, in-house development of an innovative SiC module design, and outsourced module manufacturing in the US, followed by rigorous testing by our team at leading US research institutions.
Tagged as:
SBIR
Phase I
2021
DOE
ARPA-E