Advanced Technologies/Laboratories Intl

Company Information
Address Advanced Technologies/Lab Intl
20010 Century Blvd, Ste 500
Germantown, MD, 20874 0111



# of Employees: N/A

Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: Y

Woman Owned: Y

Award Charts

Award Listing

  1. Web-based Training Center

    Amount: $399,911.00

    DESCRIPTION (provided by applicant) The primary aim is to facilitate the development and delivery of live, interactive HAZWOPER training through the use of internet-based Advanced Training Technolog ...

    SBIRPhase II2005Department of Health and Human Services

    Amount: $396,328.00

    DESCRIPTION (provided by applicant) ATL will develop the WBTC to facilitate collaborative Hazwoper training for groups of participants in remote locations in real time using internet technology. This ...

    SBIRPhase I2002Department of Health and Human Services
  3. Small Synthetic Aperture Radar (SmallSAR)

    Amount: $0.00


    SBIRPhase I2001Navy Department of Defense
  4. Small Synthetic Aperture Radar (SmallSAR)

    Amount: $140,000.00


    SBIRPhase II2001Navy Department of Defense
  5. N/A

    Amount: $1,000,000.00


    SBIRPhase II1999Missile Defense Agency Department of Defense
  6. Integration of On-Line Sensors with the CVD Fiber-Coating Process

    Amount: $100,000.00


    SBIRPhase I1999Air Force Department of Defense
  7. Novel High Temperature Insulators for Thin Film Thermocouples

    Amount: $75,000.00


    SBIRPhase I1999Department of Commerce
  8. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    Amount: $1,900,000.00

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wa ...

    SBIRPhase II1998Missile Defense Agency Department of Defense
  9. Interconnect Technology for High Temperature SiC Integrated Circuits

    Amount: $600,000.00

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from in ...

    SBIRPhase II1998Air Force Department of Defense
  10. High Brightness LEDs based on the (A1, Ga,In)N Materials System

    Amount: $749,154.00

    116 High Brightness LEDs based on the (Al, Ga,In)N Materials System--Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4131; Dr. Karim Boutros, Principal Investigator Dr. Du ...

    SBIRPhase II1998Department of Energy

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