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Agnitron Technology

Company Information
Address
8360 Commerce Drive
Chanhassen, MN 55317
United States


https://agnitron.com/

Information

DUNS: 054898964

# of Employees: 12


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Ultrapure, High Growth Rate Epitaxial Technologies for Gallium Nitride Ultra High Voltage Power Electronics

    Amount: $1,026,611.00

    Future DoD and Navy missions require advances in current high voltage power electronics technology. In this proposed effort, Agnitron will investigate the limitations of existing MOCVD technology and ...

    SBIRPhase II2020Department of Defense Navy
  2. Develop Ultra-Fast Metastable Ion Implant Activation System

    Amount: $138,851.00

    Gallium Nitride (GaN) has numerous fundamental figures of merit which provide advantages over SiC and Si, which are, respectively, the current state-of-the-art and standard material systems for power ...

    SBIRPhase I2020Department of Defense Navy
  3. High Growth Rate GaN MOCVD Platform for Ultrahigh Voltage Devices

    Amount: $124,986.00

    Future DoD and Navy missions require advances in current high voltage power electronics technology. In this proposed effort, Agnitron will investigate the limitations of existing MOCVD technology and ...

    SBIRPhase I2019Department of Defense Navy
  4. Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications

    Amount: $748,948.00

    This Phase II program sets out to capitalize on recent advances in epitaxial growth of β-Ga2O3 which have the potential to significantly improve upon the performance of currently available power el ...

    SBIRPhase II2019Department of Defense Air Force
  5. Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics

    Amount: $999,947.00

    xß-Ga2O3 has emerged as a potentially disruptive semiconductor with a predicted breakdown field of ~8 MV/cm which is more than twice the breakdown field for the incumbent wide bandgap semiconductors ...

    STTRPhase II2018Department of Defense Navy
  6. Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications

    Amount: $149,970.00

    This Phase I program sets out to capitalize on recent advances in epitaxial growth of -Ga2O3 which have the potential to significantly improve upon the performance of currently available power electro ...

    SBIRPhase I2017Department of Defense Air Force
  7. A New MOCVD Platform for Commercially Scalable Growth of-Ga2O3 Device Structures

    Amount: $79,957.00

    Future DoD and Navy missions require advances in current high voltage power electronics technology as existing technology and even recent promising advances in Silicon Carbide and Gallium Nitride base ...

    STTRPhase I2016Department of Defense Navy
  8. Investigation of Donor and Acceptor Ion Implantation in AlN

    Amount: $149,888.17

    AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to ac ...

    SBIRPhase I2014Department of Energy
  9. Solar Blind MgZnO Photodetectors

    Amount: $999,042.00

    This project address the fabrication of solar blind detectors from the MgZnO material system. Both MBE and MOCVD material growth techniques will be used for deposition of the required material layers. ...

    STTRPhase II2014Department of Defense Army
  10. Radiation Hard Multichannel AlN/GaN HEMT for High Efficiency X- and Ka-Band Power Amplifiers

    Amount: $124,928.00

    This project is directed to the development of low-loss, high power-density Aluminum Nitride (AlN)/Gallium Nitride (GaN) heterostructure based transistors for enabling high-efficiency solid state powe ...

    SBIRPhase I2014National Aeronautics and Space Administration
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