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APPLIED NOVEL DEVICES, INC.

Company Information
Address
15844 GARRISON CIR
AUSTIN, TX 78717-3005
United States



Information

UEI: VZANADJA6MA4

# of Employees: 6


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. ANDFET – A new class of Si power MOSFETs with near zero reverse recovery

    Amount: $1,315,219.00

    Applied Novel Devices (AND) is commercializing an innovative power MOSFET technology platform (called ANDFET) that brings in several unique GaN-like performance benefits to Si power devices at a fract ...

    STTRPhase II2023Department of Defense Army
  2. SBIR Phase II: Thin crystalline technologies for advanced power transistors

    Amount: $750,000.00

    This Small Business Innovation Research (SBIR) Phase II project seeks to de-risk the volume manufacturability and reliability of thin crystalline power MOSFETs fabricated with a novel exfoliation tech ...

    SBIRPhase II2017National Science Foundation
  3. High Performance, Flexible, Silicon-Based Photovoltaic Devices

    Amount: $999,999.80

    In Phase 1, we have demonstrated flexible high efficiency Si solar cells with efficiency of 20%. In this phase, these high efficiency cells will be integrated into a flexible PV sheets that can yield ...

    SBIRPhase II2017Department of Defense Army
  4. SBIR Phase I: Thin crystalline technologies for advanced power transistors

    Amount: $150,000.00

    The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to enable smaller chargers, power factor convertors and switches in applications ranging fr ...

    SBIRPhase I2016National Science Foundation
  5. High Performance, Flexible, Silicon-Based Photovoltaic Devices

    Amount: $100,000.00

    The primary objective of this project will be to develop a low cost light weight flexible solar module technology with less than 50 m thin crystalline Si cells for military applications. Specifically, ...

    SBIRPhase I2015Department of Defense Army
  6. Low Power Monolayer MoS2 Transistors for RF Applications

    Amount: $1,000,000.00

    In Phase II we propose to optimize wafer scale MoS2 deposition process to fabricate uniform large area monolayer and multi-layer MoS2 films and analyze the defects on these films. Monolayer regions th ...

    STTRPhase II2015Department of Defense Army
  7. High Efficiency Flexible Photovoltaics

    Amount: $150,000.00

    The main objective of this project is to fabricate flexible low cost rugged and reliable high efficiency solar cells out of thin crystalline Silicon. This project will target prototypes of large area ...

    SBIRPhase I2014Department of Defense Navy
  8. Low Power Monolayer MoS2 Transistors for RF Applications

    Amount: $150,000.00

    The objective of this proposal is to demonstrate the feasibility of producing large area, single crystal monolayer Molybdenum disulfide (MoS2) for high frequency applications. In order to be able to ...

    STTRPhase I2014Department of Defense Army
  9. SBIR Phase I: A Novel CMOS Device Architecture and Tools for beyond 14 nm Transistors

    Amount: $149,991.00

    This Small Business Innovation Research (SBIR) Phase I project aims to demonstrate a innovative device architecture (UT-FET: Ultra Thin Field Effect Transistor) for scaling of FinFET devices beyond th ...

    SBIRPhase I2014National Science Foundation
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