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APPLIED OPTRONICS CORP

Company Information
Address
981 State Route 33 W
Monroe, NJ 08831-5923
United States


http://www.applied-optronics.com
Information

UEI: N/A

# of Employees: 5
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 8

  1. Wafer-Level Electronic-Photonic Co-Packaging

    Amount: $149,895.00

    To address the US Air Force need next-generation optoelectronic systems with heterogeneously integrated photonic and electronic components, Applied Optronics (AO) proposes to develop a Three-Dimension ...

    STTRPhase I2017Department of Defense Air Force

  2. GaAs-based Uncooled Integrated Compact Analog Transmitter

    Amount: $79,828.00

    In response to the Navy need for an uncooled optical transmitter operating at a wavelength near 1 micrometer, Applied Optronics (AO) proposes to develop a GaAs-based Uncooled Integrated Compact Analog ...

    SBIRPhase I2015Department of Defense Navy

  3. Compact Integrated Silicon Nitride Microresonator Accelerometer

    Amount: $999,977.00

    The overall goal of this Phase II project is to demonstrate the feasibility of the proposed OPTIMA technology through modeling, design optimization, and experimental demonstration of the accelerometer ...

    STTRPhase II2014Department of Defense Defense Advanced Research Projects Agency

  4. Compact Integrated Silicon Nitride Microresonator Accelerometer

    Amount: $99,990.00

    To solve the DARPA need for high-performance MEMS-based optomechanical accelerometers, Applied Optronics proposes to develop a Compact Integrated Silicon Nitride Microresonator Accelerometer (OPTIMA), ...

    STTRPhase I2013Department of Defense Defense Advanced Research Projects Agency

  5. Development of Visible Diode Lasers by Using I-III-VI2 Semiconductor

    Amount: $49,495.00

    The proposed Phase 1 approach utilizes a material system, the I-III-VI2 compounds, for which some early success in the fabrication of laser devices and LEDs has been achieved in Japan. The benefits to ...

    SBIRPhase I1997Department of Commerce

  6. MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2- 5 Microns

    Amount: $366,000.00

    It is the goal of Applied Optronics to develop, fabricate and package antimony alloy diode lasers capable of high power operation at wavelengths between 2 and 5 microns, and to design a practical, hig ...

    SBIRPhase II1994Department of Defense Air Force

  7. Advanced Fiber Coupled Semiconductor Lasers: A Compact 10 Watt Demonstrator

    Amount: $46,322.00

    Because of the extreme compactness, very good portability, reliability, and ease-of-use of the diode lasers, high power systems that combine the light from several diode lasers offer significant ergon ...

    SBIRPhase I1993Department of Defense Air Force

  8. MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2- 5 Microns

    Amount: $50,967.00

    N/A

    SBIRPhase I1993Department of Defense Air Force
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