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ASTRALUX, INC.

Company Information
Address
2500 CENTRAL AVE. # 286
Boulder, CO 80301 2845
United States



Information

UEI: N/A

# of Employees: 3


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Hybrid semi-insulating SIC wafers

    Amount: $99,999.00

    "Researchers at Astralux, Inc. propose to develop hybrid semi-insulating SiC wafers using a novel technique. Specifically, our overall goal is to commercialize epi-ready 3-inch and 4-inch 4H and 6H S ...

    SBIRPhase I2002Department of Defense Air Force
  2. SBIR Phase I: Efficient Si-based Light Emitting Diodes and Lasers via Wafer-bonded Quantum Dot Arrays

    Amount: $100,000.00

    This Small Business Innovation Research (SBIR) Phase I project will provide an inexpensive, highly-scaleable process technology to create high-brightness, short wavelength, silicon-based LEDs (light e ...

    SBIRPhase I2002National Science Foundation
  3. PHOTO-ASSISTED EPITAXY OF WURTZITE GAN

    Amount: $70,000.00

    "This work proposes to develop innovative methods to use photo-assisted epitaxial growth for GaN in order to reduce the defects that limit device performance. Light can interact with the surface of t ...

    SBIRPhase I2002Department of Defense Missile Defense Agency
  4. Large-area and low-cost hybrid SIC wafers

    Amount: $0.00

    "Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Speci ...

    SBIRPhase I2002Department of Defense Missile Defense Agency
  5. Large-area and low-cost hybrid SIC wafers

    Amount: $65,000.00

    "Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Speci ...

    SBIRPhase II2002Department of Defense Missile Defense Agency
  6. High power SiC transistors for superior X-band radar

    Amount: $69,987.00

    "Astralux, Inc. proposes to develop a new high-power SiC bipolar junction transistor (BJT) operating at ten times higher power density and five times higher efficiency compared to conventional power t ...

    SBIRPhase I2002Department of Defense Missile Defense Agency
  7. Integrated Device Cooling Based on Hot Electron Emission

    Amount: $0.00

    "Astralux is developing a new approach to the active cooling of electronics that is intrinsically very efficient, low-volume and low cost. The electronic cooler is based on the Nottingham effect. In ...

    SBIRPhase I2002Department of Defense Defense Advanced Research Projects Agency
  8. Integrated Device Cooling Based on Hot Electron Emission

    Amount: $374,999.00

    "Astralux is developing a new approach to the active cooling of electronics that is intrinsically very efficient, low-volume and low cost. The electronic cooler is based on the Nottingham effect. In ...

    SBIRPhase II2002Department of Defense Defense Advanced Research Projects Agency
  9. Combinatorial Approach to Improved P-Type Contacts via Optimal Molecular Doping

    Amount: $66,609.00

    "Astralux, Inc. proposes to develop a novel and enabling p-type doping technology for the III-V nitrides with significant applications in the electronic and optoelectronic device arenas. Specifically ...

    STTRPhase I2002Department of Defense Missile Defense Agency
  10. Improved Microminiature Thermionic Converter Using Low Work Function AlGaN Electrodes

    Amount: $100,000.00

    "There is a general need to generate high energy density electrical power sources for space, aircraft, ground and naval vehicles, as well as to convert the heat already present in high temperature sou ...

    SBIRPhase I2002Department of Defense Air Force
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