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ASTRALUX, INC.

Company Information
Address
2500 CENTRAL AVE. # 286
Boulder, CO 80301 2845
United States



Information

UEI: N/A

# of Employees: 3


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Silicon Carbide Power Transistors for High Power Transmitter

    Amount: $100,000.00

    Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal ...

    SBIRPhase I2001Department of Defense Air Force
  2. Growth of a Boule of GaN

    Amount: $64,999.00

    A recent workshop on wide bandgap semiconductors concluded there is still an urgent need for a GaN single crystal boule. Such a boule would allow the fabrication of single crystal wafers of high qua ...

    SBIRPhase I2001Department of Defense Missile Defense Agency
  3. High-Power, High-Temperature and High-Speed SIC Heterojunction Bipolar Transistors

    Amount: $350,000.00

    N/A

    SBIRPhase II2000Department of Defense Air Force
  4. N/A

    Amount: $99,000.00

    N/A

    SBIRPhase I2000Department of Defense Defense Advanced Research Projects Agency
  5. N/A

    Amount: $65,000.00

    N/A

    SBIRPhase I2000Department of Defense Missile Defense Agency
  6. N/A

    Amount: $70,000.00

    N/A

    STTRPhase I2000Department of Defense Navy
  7. High-Power, High-Temperature and High-Speed SIC Heterojunction Bipolar Transistors

    Amount: $70,000.00

    Not Available This effort shall develop a product for high speed, high data throughput Wavelength Division Multiplexing optical networks through an integrated Micro-electro-mechanical System - Epitax ...

    SBIRPhase I1999Department of Defense Office of the Secretary of Defense
  8. Improved SiO2/SiC Interface for High-Power MOS-Controlled SiC Devices

    Amount: $65,000.00

    N/A

    STTRPhase I1999Department of Defense Missile Defense Agency
  9. Protein Crystals as Patterning Elements for Nanostructured Optoelectronic Materials

    Amount: $70,000.00

    We propose to develop a new technology for the parallel nanostructuring of optoelectronic materials. It calls for the molecular self-assembly of protein masks on a surface which has been primed with ...

    SBIRPhase I1995Department of Defense Army
  10. High Temperature Package for SiC-based Transistors

    Amount: $100,000.00

    Astralux is developing heterobipolar transistors (HBT) using a SiC base. This device operates above 500 C with a current gain in excess of 100. Most of the effort went into design, technology, and c ...

    SBIRPhase I1995Department of Defense Navy
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