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ASTRALUX, INC.

Company Information
Address
2500 CENTRAL AVE. # 286
Boulder, CO 80301 2845
United States



Information

UEI: N/A

# of Employees: 3


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. High-Power High-Frequency Transistor

    Amount: $70,000.00

    Astralux, having recently made the first transistor structure to operate above 500 C with a current gain exceeding 100, proposes to explore the limitations of the transistor's power handling capabilit ...

    SBIRPhase I1995Department of Defense Navy
  2. A High Power High Frequency Transistor

    Amount: $75,000.00

    N/A

    SBIRPhase I1995Department of Energy
  3. Biotechnology Applied Nanostructures

    Amount: $290,000.00

    WE PROPOSE TO APPLY A BIOTECHNOLOGY-BASED PROCESS TO MAKE NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS. THE RESULT WILL BE A UNIFORM ARRAY OF SILICON QUANTUM BOXES OF IDENTICAL DIMENSIONS IN A SILIC ...

    SBIRPhase II1994Department of Defense Missile Defense Agency
  4. GROWTH OF GAN SINGLE-CRYSTAL BOULES

    Amount: $58,184.00

    The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching cry ...

    SBIRPhase I1994Department of Defense Missile Defense Agency
  5. SOLAR-BLIND GAN/ALN UV AND VUV SENSOR

    Amount: $59,995.00

    Astralux, Inc. will develolp a seminconductor sensor sensitive to bacuum ultraviolet photons. For this, we shall synthesize a wide bandgap semiconductor capable of forming a built-in electric field th ...

    SBIRPhase I1994Department of Defense Missile Defense Agency
  6. DIAMOND-BASED THERMAL SENSORY ELEMENT

    Amount: $58,156.00

    There is a market for a room temperature infrared detector as well as for a detection system which is radiation resistant and works at high temperatures and in reactive environments. Current infrared ...

    SBIRPhase I1994Department of Defense Missile Defense Agency
  7. Rare Earth Doped III-V Semiconductor for Optoelectronics

    Amount: $65,000.00

    The proposed research and development effort will explore the electroluminescene properties of rare earth elements in a III-V semiconductor. The technique of impact excitation, currently used in comme ...

    SBIRPhase I1994Department of Defense Air Force
  8. Short Wavelength Injection Lasers

    Amount: $65,000.00

    N/A

    SBIRPhase I1994National Science Foundation
  9. High Temperature Optoelectronics

    Amount: $300,000.00

    There are no commercial amplifiers that can operate at temperatures above 125 degrees Celsius. We will combine two comparable wide bandgap semiconducting materials to make electronic amplifiers and sw ...

    SBIRPhase II1993Department of Defense Missile Defense Agency
  10. Wide Bandgap Semiconductors for High-Temperature Electronics

    Amount: $63,051.00

    THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL ...

    SBIRPhase I1993Department of Defense Missile Defense Agency
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