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Avogy

Company Information
Address
677 River Oaks Parkway
San Jose, CA 95134-
United States
Information

UEI: N/A

# of Employees: N/A
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 4

  1. High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

    Amount: $585,744.00

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 5000V or higher, normally-off operation, and a drain current rating of 1A is pro ...

    SBIRPhase II2014Department of Defense Navy

  2. High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

    Amount: $137,979.00

    Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demo ...

    SBIRPhase I2013Department of Defense Navy

  3. Vertical GaN transistors on bulk GaN substrates

    Amount: $225,000.00

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is p ...

    SBIRPhase I2013Department of Energy ARPA-E

  4. Vertical GaN transistors on bulk GaN substrates

    Amount: $1,112,425.00

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is p ...

    SBIRPhase II2013Department of Energy ARPA-E
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