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Cambridge Electronics, Inc.
UEI: U6PQDHYHLHS3
# of Employees: 5
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
Amount: $149,172.00This program aims to develop the technology for a new generation of normally-off GaN power transistors with breakdown voltages of 1000 V and linear current of 50 A. These devices will be fabricated th ...
SBIRPhase II2017Department of Defense Navy -
Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Amount: $528,547.00The goal of Phase II of this STTR project is to optimize the GaN transistor obtained in Phase I to deliver a 100-W power amplifier with 90% power added efficiency (PAE) at 1 GHz. Emphasis will be put ...
STTRPhase II2015Department of Defense Navy -
Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Amount: $79,991.00This project is focused on the development of a new generation of GaN-based transistors with breakdown voltages in excess of 1kV that can be used in the demonstration of power amplifiers operating at ...
STTRPhase I2013Department of Defense Navy -
Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
Amount: $497,621.00This program aims to develop the technology for a new generation of normally-off GaN power transistors with breakdown voltages of 1000 V and linear current of 50 A. These devices will be fabricated th ...
SBIRPhase II2013Department of Defense Navy -
Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
Amount: $150,000.00Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching freq ...
SBIRPhase I2012Department of Defense Navy
