CoolCAD Electronics

Company Information
Address MD
Suite 2103
Takoma Park, MD, 20912-4671


DUNS: 784794930

# of Employees: 10

Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N

Award Charts

Award Listing

  1. Integrated On-Chip Power for Harsh Environments

    Amount: $124,990.00

    CoolCAD proposes a high temperature and radiation tolerant silicon carbide (SiC) technology that is comprised of an integrated circuit and a complementary power device for use in power applications su ...

    SBIRPhase I2018National Aeronautics and Space Administration
  2. A Silicon Carbide Foundry for NASA's UV and High Temperature CMOS Electronics Needs

    Amount: $750,000.00

    CoolCAD Electronics has developed a patent-pending technology to design and fabricate Silicon Carbide (SiC) MOSFET opto-electronic integrated circuits (ICs). We both fully design and fabricate these ...

    SBIRPhase II2017National Aeronautics and Space Administration
  3. SiC 10um-Pitch UV Imaging Array and APD with Active Pixel Readout

    Amount: $125,000.00

    CoolCAD Electronics, LLC, proposes to design and fabricate a SiC UV detector array with a 10μm pixel pitch, sensitive to EUV, VUV and Deep UV. SiC is a visible-blind material with very low intrin ...

    SBIRPhase I2017National Aeronautics and Space Administration
  4. Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature

    Amount: $125,000.00

    To extend the survivability of high temperature extreme environment missions, we propose to design, fabricate and test silicon carbide integrated circuits that are radiation tolerant and high temperat ...

    SBIRPhase I2017National Aeronautics and Space Administration
  5. Single Chip EUV, VUV and Deep UV Photodetector System with Integrated Amplifier

    Amount: $125,000.00

    We here propose the development and fabrication of an integrated sensor device capable of detecting across a wide band of UV radiation, from extreme UV (1 to 50 nm) through vacuum UV (50 to 175 nm) an ...

    SBIRPhase I2016National Aeronautics and Space Administration
  6. Improving the Response of Silicon Carbide Devices to Cosmic Radiation

    Amount: $125,000.00

    The ultimate goal of this proposal is to provide NASA space SEE and TID tolerant high voltage and low on-resistance silicon carbide power devices that meet the capability performance goals in the NASA ...

    SBIRPhase I2016National Aeronautics and Space Administration
  7. Large Area Silicon Carbide Photodiode Active Pixel Sensor

    Amount: $125,000.00

    CoolCAD Electronics, LLC, is proposing the design and fabrication of silicon-carbide based active pixel sensor, comprising a very LARGE AREA SiC UV photodiode (>4mm2 in Phase I and >4cm2 in Phase II) ...

    SBIRPhase I2015National Aeronautics and Space Administration
  8. Plasmonic Enhanced Infrared Rectennas: Energy Harvesting, Terahertz Detection and Thermal Imaging

    Amount: $750,000.00

    We propose to build a two-dimensional multi-pixel infrared detector based on rectenna technology. The rectennas comprise of a micro-antenna tuned to terahertz reception and an integrated Metal-Insulat ...

    STTRPhase II2013Department of Defense Navy
  9. Computer Aided Design Platform for Silicon Carbide Power Electronics

    Amount: $500,000.00

    Silicon Carbide (SiC) electronics has the potential for revolutionizing the high temperature high power electronics industry. There is a strong need for tools and models for circuit design using the n ...

    SBIRPhase II2013Department of Defense Army
  10. Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping

    Amount: $749,889.00

    Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ru ...

    SBIRPhase II2012National Aeronautics and Space Administration

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