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EPITRONICS CORP.

Company Information
Address
21002 N. 19th Avenue, Suite5
Phoenix, AZ 85027
United States



Information

UEI: N/A

# of Employees: 20


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Alternative Substrates for Materials Integration

    Amount: $65,000.00

    The recent demonstration of twist bonded GaAs substrates offers the potential to develop universally compliant substrates upon which almost any III-V or related semiconductor can be grown without latt ...

    SBIRPhase I1998Department of Defense Missile Defense Agency
  2. Improved Performance Double Heterostructure InGaP Heterojunction Bipolar Transistors

    Amount: $100,000.00

    High frequency systems designers are now employing III-V heterostructure bipolar transistors (HBTs) in low power portable applications as well as in high power systems. Although most devices have use ...

    SBIRPhase I1998Department of Defense Air Force
  3. Transition of AlGaP Durable Coating Technology to Production for Development of Affordable Multispectral Windows

    Amount: $100,000.00

    The overall objective of this program is to develop the foundation to commercially produce durable, and hence affordable, large area AlGaP coated windows for multispectral sensor array Systems. This ...

    SBIRPhase I1998Department of Defense Army
  4. Nonequilibrium Electron Transport in InP Based Hybrid Heterojunction

    Amount: $60,000.00

    InP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it ...

    SBIRPhase I1996Department of Defense Missile Defense Agency
  5. Indium Phosphide Material Growth For Microwave And Millimeter Wave Monolithic Integrated Circuits

    Amount: $374,550.00

    The InP material system has been somewhat slow to develop for electrical devices commercially due to the general complexity of the associated alloys. The majority of work presently completed has been ...

    SBIRPhase II1995Department of Defense Defense Advanced Research Projects Agency
  6. Indium Phosphide Material Growth For Microwave And Millimeter Wave Monolithic Integrated Circuits

    Amount: $56,584.00

    N/A

    SBIRPhase I1993Department of Defense Defense Advanced Research Projects Agency
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