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HEXATECH
UEI: K824NLWKDVH3
# of Employees: 5
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)
Amount: $0.00Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth proce ...
STTRPhase I2004Department of Defense Missile Defense Agency -
Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)
Amount: $499,997.00Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth proce ...
STTRPhase II2004Department of Defense Missile Defense Agency -
AlN single crystals for photonic applications
Amount: $69,999.00The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a p ...
SBIRPhase I2003Department of Defense Missile Defense Agency -
Growth of GaN single crystals (BMD002-014A)
Amount: $69,976.00Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication o ...
SBIRPhase I2003Department of Defense Missile Defense Agency -
Growth of AlN Crystals
Amount: $599,997.00"The objective of this proposal is the fabrication of AlN substrates with single crystalline quality meeting or exceeding the standards of commercially available SiC wafers. The growth process, which ...
STTRPhase II2002Department of Defense Missile Defense Agency -
Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)
Amount: $69,998.00"The objective of this proposal is to demonstrate the feasibility of large-area aluminum nitride (AlN) wafers for III-nitride substrate applications. The growth strategy consists of growing single cry ...
STTRPhase I2002Department of Defense Missile Defense Agency -
Development of coherent nanophotonic UV sources
Amount: $99,999.00"It has been shown theoretically and experimentally, that one-dimensional photonic bandgap (1DPBG) structures enhance nonlinear effects for one to three orders of magnitude. By exploiting these effect ...
STTRPhase I2002Department of Defense Air Force -
Process for volume production of GaN substrates (Subtopic A: Electronic Materials)
Amount: $69,998.00"The objective of proposed research is to develop a commercially viable process for ammonothermal growth of gallium nitride (GaN) crystals suitable for fabrication of GaN wafers. The ammonothermal cry ...
STTRPhase I2002Department of Defense Missile Defense Agency -
Growth of AlN Crystals
Amount: $65,136.00The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate ...
STTRPhase I2001Department of Defense Missile Defense Agency
