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IBEAM MATERIALS, INC.

Company Information
Address
2778A AGUA FRIA ST
SANTA FE, NM 87507-0000
United States


http://www.ibeammaterials.com

Information

DUNS: 078452068

# of Employees: 6


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Novel Process for Low-cost Large-area GaN Templates on Metal Foils

    Amount: $155,000.00

    Wide band gap devices are considered a key future electronics technology in a number of applications especially for high-power electronics. These devices are based on high-quality epitaxial films of w ...

    SBIRPhase I2017Department of Energy
  2. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    Amount: $1,242,575.00

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films g ...

    STTRPhase II2016Department of Energy ARPA-E
  3. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    Amount: $1,458,486.50

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films g ...

    STTRPhase II2014Department of Energy ARPA-E
  4. Single Crystal Self-Assembly

    Amount: $100,000.00

    iBeam Materials practices a technology for fabricating large-area crystalline-aligned coatings (films) on polycrystalline substrates using ion-beam assisted deposition (IBAD). Crystalline-aligned film ...

    SBIRPhase I2013Department of Defense Defense Advanced Research Projects Agency
  5. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    Amount: $224,981.56

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films g ...

    STTRPhase I2013Department of Energy ARPA-E
  6. SBIR Phase I: Development of Large-Area Crystal-Aligned Substrates for Epitaxial Graphene

    Amount: $150,000.00

    This Small Business Innovation Research (SBIR) Phase I project addresses the need for substrates for graphene films. Graphene is a unique two-dimensional material that has been called the ?miracle mat ...

    SBIRPhase I2013National Science Foundation
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