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IBIS TECHNOLOGY CORP.
UEI: N/A
# of Employees: 58
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Acoustic Wave Inspection of SOI Substrates for Space System Applications
Amount: $749,381.00SIMOX (Separation by IMplanted OXygen) technology achieves total dielectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in b ...
SBIRPhase II1998Department of Defense Air Force -
Low-Dose Low-Energy SIMOX for Fully Depleted Silicon-on-Insulator (SOI)
Amount: $100,000.00A program is proposed to investigate and develop thin buried oxide (BOX) SIMOX with quality of silicon and BOX layers suitable to support fully depleted SOI applications with minimum feature size at a ...
SBIRPhase II1998Department of Defense Defense Advanced Research Projects Agency -
STATISTICAL PROCESS CONTROL OF ELECTRICAL PARAMETERS FOR SIMOX SOI
Amount: $74,978.00N/A
SBIRPhase I1998Department of Commerce -
Thin Buried Oxide Densification for Radiation Hardened 80nm BOX SIMOX Substrates
Amount: $99,989.00SIMOX (Separation by IMplanted Oxygen) technology achieves total dielelectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in ...
SBIRPhase I1997Department of Defense Defense Threat Reduction Agency -
Low-Dose Low-Energy SIMOX for Fully Depleted Silicon-on-Insulator (SOI)
Amount: $98,506.00A program is proposed to investigate and develop thin buried oxide (BOX) SIMOX with quality of silicon and BOX layers suitable to support fully depleted SOI applications with minimum feature size at a ...
SBIRPhase I1997Department of Defense Defense Advanced Research Projects Agency -
Acoustic Wave Inspection of SOI Substrates for Space System Applications
Amount: $99,990.00SIMOX (Separation by IMplanted OXygen) technology achieves total dielectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in b ...
SBIRPhase I1997Department of Defense Air Force -
Thin Buried Oxide Densification For Low Power Simox Soi Substrate Applications
Amount: $69,998.00N/A
SBIRPhase I1997National Aeronautics and Space Administration -
Radiation Hardened Silicon-on-Insulator Substrates for Advanced Electronics
Amount: $603,211.00SIMOX (Separation by Implanted Oxygen) technology achieves total dielectric isolation of active device regions from the substrate and reduces the collection path for ionized charges via the built-in b ...
SBIRPhase II1996Department of Defense Defense Threat Reduction Agency -
Investigation of Internal Thermal Oxidation (ITOX) in SIMOX
Amount: $450,384.00A program is proposed to investigate effects of high temperature internal thermal oxidation (ITOX) on SIMOX material. In phase I, a fundamental understanding of transport of oxygen and kinetics of th ...
SBIRPhase II1996Department of Defense Air Force -
MODIFIED IN-SITU RUTHERFORD DESIGN FOR EARLY SIMOX CONTAMINATION DETECTION
Amount: $299,997.00THE DETECTION OF CONTAMINANTS IN MANUFACTURING IS ESSENTIAL FOR CERTAIN PROCESSES, AND EARLY CONTAMINATION DETECTION AND TRACING IS BENEFICIAL FOR LOWERING THE ULTIMATE MATERIAL COST OF A PRODUCT. IN ...
SBIRPhase II1996National Science Foundation
