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III-N Technology, Inc

Company Information
Address
Reese Technology Center Building #37 304 Eisenhower Drive
Lubbock, TX 79416
United States


http://www.3n-tech.com/

Information

UEI: N/A

# of Employees: 6


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. III-nitride 1.5 Micron Photonic Devices on Si Substrates

    Amount: $100,000.00

    Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photo ...

    STTRPhase I2010Department of Defense Army
  2. 3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

    Amount: $730,000.00

    The goal of this SBIR project is to develop next generation inorganic semiconductor micro-emitter based emissive microdisplays with the following merits: (1) Much higher brightness and power efficienc ...

    SBIRPhase II2009Department of Defense Army
  3. 3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

    Amount: $70,000.00

    The goal of this SBIR project is to develop next generation inorganic semiconductor based emissive microdisplays with the following merits: •Much higher brightness and power efficiency (5 x) than th ...

    SBIRPhase I2007Department of Defense Army
  4. STTR Phase I: Erbium Doped III-Nitride Materials and Photonic Structures for Optical Communications

    Amount: $100,000.00

    The Small Business Technology Transfer Research (STTR) Phase I project will develop metal-organic chemical vapor deposition (MOCVD) growth technology for the in-situ Er incorporation into III-nitride ...

    STTRPhase I2007National Science Foundation
  5. AlN Based Extreme Ultraviolet (EUV) Detectors

    Amount: $100,000.00

    This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We plan to devise methods to improve ...

    STTRPhase I2006National Aeronautics and Space Administration
  6. SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

    Amount: $467,672.00

    The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will ...

    SBIRPhase II2005National Science Foundation
  7. SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

    Amount: $100,000.00

    The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will ...

    SBIRPhase I2004National Science Foundation
  8. High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

    Amount: $70,000.00

    The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very h ...

    SBIRPhase I2003Department of Defense Missile Defense Agency
  9. III-Nitride Integrated Micro-Cavity Photonic Devices

    Amount: $425,533.00

    "The research proposed here is built on the promising results obtained in the Phase I project. During Phase I research, we have further improved blue micro-size light emitter output power efficiencie ...

    SBIRPhase II2002Department of Defense Navy
  10. Detection of foreign materials in prepregs

    Amount: $99,204.00

    The research proposed here is built on the recent successful fabrication of the first electrically-pumped III-nitride micro-size LED, micro-size LED arrays, and waveguides by the principal investigato ...

    SBIRPhase I2001Department of Defense Navy
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