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Inlustra Technologies LLC

Company Information
Address
5385 Hollister Ave. #113
Santa Barbara, CA 93111-2391
United States
Information

UEI: N/A

# of Employees: 6
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 6

  1. SBIR Phase II: Scalable Bulk GaN Crystal Growth

    Amount: $423,988.00

    This Small Business Innovation Research (SBIR) Phase II project aims to grow gallium nitride (GaN) single crystals that are large enough to yield commercially-viable non-polar GaN substrates for optoe ...

    SBIRPhase II2011National Science Foundation

  2. Producibility of Gallium Nitride Semiconductor Materials

    Amount: $100,000.00

    Inlustra Technologies and the University of Notre Dame propose a Phase I STTR program that, combined with a subsequent Phase II effort, will result in methods for the scalable production of semi-insul ...

    STTRPhase I2010Department of Defense Missile Defense Agency

  3. SBIR Phase I: Scalable Bulk GaN Crystal Growth

    Amount: $150,000.00

    This Small Business Innovation Research Phase I project will demonstrate the feasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrate ...

    SBIRPhase I2009National Science Foundation

  4. Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

    Amount: $750,000.00

    Inlustra Technologies and the University of California, Santa Barbara propose a Phase II STTR project to grow and characterize single-crystal boules of gallium nitride (GaN) along non-polar directions ...

    STTRPhase II2008Department of Defense Army

  5. Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

    Amount: $100,000.00

    Inlustra Technologies and the University of California, Santa Barbara propose to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent ...

    STTRPhase I2006Department of Defense Army

  6. STTR Phase I: Nonpolar GaN-Based Light Emitting Diodes

    Amount: $100,000.00

    This Small Business Technology Transfer (STTR) Phase I project will develop nonpolar gallium nitride (GaN)-based light emitting diodes (LEDs) with high energy efficiency and output power. Nonpolar GaN ...

    STTRPhase I2006National Science Foundation
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