MicroLink Devices

Company Information
Address 6457 W. Howard St.
Niles, IL, 60714-


Information

DUNS: 135553472

# of Employees: N/A


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Integrated L-Band T/R Module

    Amount: $600,000.00

    The goal of this Phase II project is to deliver an integrated L-band transmit/receive (T/R) module which will be fabricated from a GaAs-based combined HBT/PHEMT epistructure. The T/R module will cons ...

    SBIRPhase II2008National Aeronautics and Space Administration
  2. Thin Multijunction Solar Cells

    Amount: $100,000.00

    The innovation in this Phase I SBIR is the development of a technology, which will enable the manufacture of a lightweight and low cost, InP wafer based high efficiency multijunction solar cells suita ...

    SBIRPhase I2008Department of Defense Air Force
  3. High Efficiency Lightweight Triple Junction GaAs Solar Cells

    Amount: $749,962.00

    The significance of the innovation in this Phase II SBIR is the development of a low cost lightweight multi-bandgap GaAs semiconductor material for high efficiency multijunction solar cells for space ...

    SBIRPhase II2008Department of Defense Air Force
  4. Front End Opto-Electronics for Future Radio Communications

    Amount: $99,000.00

    The innovation in the proposed program is the development of a unique process technology that will enable the realization of a high current InP based photodetector with improved current response and r ...

    STTRPhase I2008Department of Defense Defense Advanced Research Projects Agency
  5. SBIR Phase I: Hypertag: A Locator Tag with GPS and Cellular Communications Capability

    Amount: $100,000.00

    This Small Business Innovation Research Phase I research project addresses the need to collect information on the location and condition of high-value inventory items while in transit. The project obj ...

    SBIRPhase I2008National Science Foundation
  6. InGaP DHBT for High Efficiency L-band T/R Module

    Amount: $99,993.00

    A fully monolithically integrated L-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. We plan to improve the eff ...

    SBIRPhase I2007National Aeronautics and Space Administration
  7. Advanced Multijunction Solar Cell on Misoriented GaAs Substrates

    Amount: $100,000.00

    The significance of the innovation in this Phase I SBIR is the development of a low cost compound semiconductor material for high efficiency and high specific power solar array technology. This will ...

    SBIRPhase I2007Department of Defense Air Force
  8. Photovoltaic Cells for Very High Altitude Very Long Endurance Solar Aircraft

    Amount: $99,000.00

    The significance of the innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a light weight, low cost cost , multi-band gap compound semiconductor m ...

    SBIRPhase I2007Department of Defense Defense Advanced Research Projects Agency
  9. SBIR Phase I: Advanced Lift-off Technology for Low cost III-V Solar Cell Manufacturing

    Amount: $100,000.00

    This SBIR Phase I research project will develop a lower cost high quality compound semiconductor thin film for advanced renewable energy technology. This program will investigate Multiple-layer Epitax ...

    SBIRPhase I2007National Science Foundation
  10. Single Chip InGaP HBT for T/R modules

    Amount: $99,000.00

    A fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure ...

    SBIRPhase I2006Department of Defense Air Force
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