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NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.

Company Information
Address
11409 Valley View Road
Eden Prairie, MN -
United States
Information

UEI: N4M9AKGECJQ3

# of Employees: 45
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 157

  1. LOW MAGNETIC FIELD SENSING DEVICE

    Amount: $64,480.00

    A NOVEL MAGNETIC FIELD SENSING DEVICE WHICH USES THE MAGNETIC STRAY FIELD FROM A NEEL WALL IN A SOFT (LOW COERCIVITY) MAGNETIC THIN FILM TO BIAS A GIANT MAGNETORESISTANCE RATIO (GMR) SENSOR LAYER, THE ...

    SBIRPhase I1994National Science Foundation

  2. MAGNETORESISTIVE WAFER SCALE MEMORY WITH ON BOARD SEARCH/CACHE FUNCTIONS

    Amount: $64,163.00

    N/A

    SBIRPhase I1994National Science Foundation

  3. Low Cost Writeable RFID Tag with MRAM Memory

    Amount: $99,931.00

    N/A

    SBIRPhase I1994Department of Defense Defense Advanced Research Projects Agency

  4. Giant Magnetoresistive Field Sensors

    Amount: $97,452.00

    N/A

    SBIRPhase I1994Department of Defense Defense Advanced Research Projects Agency

  5. IN-PLACE DATA RECORDER FOR AIRCRAFT TRANSPARENCY SYSTEMS

    Amount: $595,666.00

    BY UTILIZMG MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) IN COMBINATION WITH SENSOR TECHNOLOGIES, NVE WILL DESIGN A COMPLETE DATA GATHERING AND STORAGE SYSTEM FOR AIRCRAFT TRANSPARENCY SYSTEMS WHICH W ...

    SBIRPhase II1993Department of Defense Air Force

  6. Controlled Anti-Ferromagnetic Coupling in Giant Magnetoresistance Materials

    Amount: $285,000.00

    The measurement of infrared spectra can develop the composition and temperature of a target object. It can also determine the concentration of gases along a measurement path, or the size of particles ...

    SBIRPhase II1993Department of Defense Missile Defense Agency

  7. Nanometer Magnetoresistive Random Access Memory

    Amount: $275,000.00

    New cell concepts using better magnetoresistive material will make Magnetoresistive Random Access Memory (MRAM) denser for the same lithography than other semiconductor solid state memories such as DR ...

    SBIRPhase II1993Department of Defense Missile Defense Agency

  8. INTEGRATED MULTI-TRACK GMR READ/WRITE HEAD WIT CMOS-SOS CIRCUITRY

    Amount: $49,677.00

    N/A

    SBIRPhase I1993National Science Foundation

  9. Controlled Anti-Ferromagnetic Coupling in Giant Magnetoresistance Materials

    Amount: $50,610.00

    N/A

    SBIRPhase I1992Department of Defense Missile Defense Agency

  10. Nanometer Magnetoresistive Random Access Memory

    Amount: $49,519.00

    N/A

    SBIRPhase I1992Department of Defense Missile Defense Agency
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