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NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
UEI: N4M9AKGECJQ3
# of Employees: 45
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Ultra-Sensitive Spin Dependent Tunneling Devices Without Biasing
Amount: $699,998.00The popularity of nanotechnology symbolizes a rapid shrinking of physical dimensions in solid state devices. However, the diminishing sizes will eventually lead to problems including thermal instabili ...
SBIRPhase II2003Department of Defense Missile Defense Agency -
Miniaturized, Synchronized, Data Acquisition System
Amount: $729,995.00The objectives of the Phase I program were successfully met with the development of a wireless breadboard communication system demonstrating that data acquisition recorders could be precisely and sync ...
SBIRPhase II2003Department of Defense Army -
Interweapon Wireless Communication
Amount: $749,982.00A novel method of intraweapon wireless communications using magnetic field transmissions was demonstrated during the Phase I portion of this program. Normal physical wire communication links cannot b ...
SBIRPhase II2003Department of Defense Air Force -
High Speed Spin Valve Magnetoresistive Isolated Signal Transceiver
Amount: $749,884.00Reliable high speed data transfer between subsystems in aerospace, military and commercial applications requires both high speed tranceiver circuitry and galvanic signal isolation. Low voltage differ ...
SBIRPhase II2003Department of Defense Missile Defense Agency -
Compact Lightweight Smart Battery Charger
Amount: $503,064.00The Objective Force soldier is going to depend heavily on electronic systems, such as the Medium Weight Thermal Weapon Sight and the Land Warrior System, that require rechargeable batteries to supply ...
SBIRPhase II2003Department of Defense Army -
High Speed Spin Valve Magnetoresistive Isolated Signal Transceiver
Amount: $0.00Reliable high speed data transfer between subsystems in aerospace, military and commercial applications requires both high speed tranceiver circuitry and galvanic signal isolation. Low voltage differ ...
SBIRPhase I2003Department of Defense Missile Defense Agency -
BMDO TOPIC-- Magneto-Thermal MRAM
Amount: $0.00Magneto-Thermal MRAM uses both heat and magnetic field (current) to overcome thermal instabilites of very small memory cells. Self-generated heat in the cell raises the temperature of magnetic materia ...
SBIRPhase I2003Department of Defense Defense Advanced Research Projects Agency -
Ultra-Low-Cost Magnetic Sensors for Submarine Detection
Amount: $98,993.00This work seeks to develop ultra-low-cost antisubmarine surveillance devices based on NVE Corporation's mass-producible solid-state magnetic sensor technology. The sensors will be used in shallow lit ...
SBIRPhase I2003Department of Defense Defense Advanced Research Projects Agency -
BMDO TOPIC-- Magneto-Thermal MRAM
Amount: $387,072.00Magneto-Thermal MRAM uses both heat and magnetic field (current) to overcome thermal instabilites of very small memory cells. Self-generated heat in the cell raises the temperature of magnetic materia ...
SBIRPhase II2003Department of Defense Defense Advanced Research Projects Agency -
Compact Lightweight Smart Battery Charger
Amount: $69,993.00The Objective Force soldier is going to depend heavily on electronic systems, such as the Medium Weight Thermal Weapon Sight and the Land Warrior System, that require rechargeable batteries to supply ...
SBIRPhase I2003Department of Defense Army