Sensor Electronic Technology, Inc.

Company Information
Address 1195 Atlas Road
Columbia, SC, 29209-


DUNS: 135907686

# of Employees: 82

Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N

Award Charts

Award Listing

  1. GaN High-Power Low-Loss C3-varactor RF switch MMIC

    Amount: $79,974.00

    WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers ...

    SBIRPhase I2014Navy Department of Defense
  2. Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

    Amount: $149,959.00

    ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrat ...

    SBIRPhase I2013Air Force Department of Defense
  3. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    Amount: $999,859.00

    This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for t ...

    STTRPhase II2012Missile Defense Agency Department of Defense
  4. Normally-OFF AlInN/GaN MISHFET with composite channel

    Amount: $79,938.00

    We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate hete ...

    SBIRPhase I2012Department of Defense Navy
  5. Ultraviolet Communication for Medical Applications

    Amount: $99,950.00

    Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electri ...

    SBIRPhase I2012Department of Defense Army
  6. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    Amount: $99,963.00

    SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with ...

    STTRPhase I2010Missile Defense Agency Department of Defense
  7. AlInN/GaN heterostructures for X-band RF power amplification

    Amount: $749,823.00

    SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. ...

    SBIRPhase II2010Missile Defense Agency Department of Defense
  8. SBIR Phase I: Development of UV-B SLED and LD

    Amount: $149,951.00

    This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral ran ...

    SBIRPhase I2010National Science Foundation
  9. High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter

    Amount: $69,199.00

    We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The propose ...

    SBIRPhase I2010Navy Department of Defense
  10. SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

    Amount: $534,765.00

    This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlIn ...

    SBIRPhase II2010National Science Foundation

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