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Sixpoint Materials, Inc.
https://www.spmaterials.com
UEI: E9NSMRRKTL49
# of Employees: 5
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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GaN-on-GaN Gunn diodes for terahertz communications in manufacturing
Amount: $200,000.00SixPoint Materials proposes the development of Gunn diodes for the generation of terahertz waves. With the increasing volume of data in manufacturing facilities, 6G communication using terahertz H-ban ...
SBIRPhase I2022Department of Energy -
Low-cost, Low-defect, 2" GaN Epi-ready Substrates Processed with E-Grinding
Amount: $1,100,000.00SixPoint Materials requests the Phase IIC project to make a transition from R&D to pilot production of low-cost, low-defect, 2" gallium nitride (GaN) epi-ready substrates developed in this SBIR projec ...
SBIRPhase II2020Department of Energy -
Low-cost, low-defect, 2" GaN epi-ready substrates processed with E-Grinding
Amount: $1,000,000.00Gallium nitride substrates are the key material for achieving high-end, energy-efficient semiconductor devices such as light emitting diodes (LEDs), laser diodes, power transistors and RF transistors. ...
SBIRPhase II2018Department of Energy -
Next-Generation, Power-Electronics Materials for Naval Aviation Applications
Amount: $125,000.00This STTR project develops an innovative seed fabrication technology to address the fundamental size-quality limitation of gallium nitride (GaN) substratesthe indispensable key component for GaN-based ...
STTRPhase I2018Department of Defense Navy -
Vertical GaN Substrates
Amount: $800,000.00SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...
STTRPhase II2017Department of Energy ARPA-E -
Lowcost, lowdefect, 2" GaN epiready substrates processed with EGrinding
Amount: $1,000,000.00Gallium nitride substrates are the key to achieving highend, energyefficient semiconductor devices such as power switches, laser diodes and light emitting diodes (LEDs). Significant effort has been ex ...
SBIRPhase II2016Department of Energy -
Development of electrolytic in-process dressing ELID) grinding of GaN wafers sliced from bulk GaN crystals by ammonothermal growth
Amount: $149,999.98Significant effort has been exerted to develop cost-effective ammonothermal growth of bulk GaN crystals; however, due to extreme hardness and chemical stability, the wafering process for bulk GaN cry ...
SBIRPhase I2015Department of Energy -
Vertical GaN Substrates
Amount: $225,000.00SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...
STTRPhase I2014Department of Energy ARPA-E -
Vertical GaN Substrates
Amount: $1,500,000.00SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...
STTRPhase II2014Department of Energy ARPA-E -
SBIR Phase I: Realization of Transparent Gallium Nitride Wafers by Ammonothermal Growth
Amount: $149,475.00This Small Business Innovation Research Phase I project will address the coloration problem of gallium nitride (GaN) grown by the ammonothermal method. Despite its promise to reduce the cost of GaN wa ...
SBIRPhase I2012National Science Foundation
