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Sixpoint Materials, Inc.

Company Information
Address
37 Industrial Way Unit 106
Buellton, CA 93427-9584
United States



Information

DUNS: 801196846

# of Employees: N/A


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Low-cost, Low-defect, 2" GaN Epi-ready Substrates Processed with E-Grinding

    Amount: $1,100,000.00

    SixPoint Materials requests the Phase IIC project to make a transition from R&D to pilot production of low-cost, low-defect, 2" gallium nitride (GaN) epi-ready substrates developed in this SBIR projec ...

    SBIRPhase II2020Department of Energy
  2. Next-Generation, Power-Electronics Materials for Naval Aviation Applications

    Amount: $125,000.00

    This STTR project develops an innovative seed fabrication technology to address the fundamental size-quality limitation of gallium nitride (GaN) substratesthe indispensable key component for GaN-based ...

    STTRPhase I2018Department of Defense Navy
  3. Low-cost, low-defect, 2" GaN epi-ready substrates processed with E-Grinding

    Amount: $1,000,000.00

    Gallium nitride substrates are the key material for achieving high-end, energy-efficient semiconductor devices such as light emitting diodes (LEDs), laser diodes, power transistors and RF transistors. ...

    SBIRPhase II2018Department of Energy
  4. Vertical GaN Substrates

    Amount: $800,000.00

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...

    STTRPhase II2017Department of Energy ARPA-E
  5. Lowcost, lowdefect, 2" GaN epiready substrates processed with EGrinding

    Amount: $1,000,000.00

    Gallium nitride substrates are the key to achieving highend, energyefficient semiconductor devices such as power switches, laser diodes and light emitting diodes (LEDs). Significant effort has been ex ...

    SBIRPhase II2016Department of Energy
  6. Development of electrolytic in-process dressing ELID) grinding of GaN wafers sliced from bulk GaN crystals by ammonothermal growth

    Amount: $149,999.98

    Significant effort has been exerted to develop cost-effective ammonothermal growth of bulk GaN crystals; however, due to extreme hardness and chemical stability, the wafering process for bulk GaN cry ...

    SBIRPhase I2015Department of Energy
  7. Vertical GaN Substrates

    Amount: $225,000.00

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...

    STTRPhase I2014Department of Energy ARPA-E
  8. Vertical GaN Substrates

    Amount: $1,500,000.00

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology ...

    STTRPhase II2014Department of Energy ARPA-E
  9. SBIR Phase I: Realization of Transparent Gallium Nitride Wafers by Ammonothermal Growth

    Amount: $149,475.00

    This Small Business Innovation Research Phase I project will address the coloration problem of gallium nitride (GaN) grown by the ammonothermal method. Despite its promise to reduce the cost of GaN wa ...

    SBIRPhase I2012National Science Foundation
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