UNITED SILICON CARBIDE, INC.

Company Information
Address 7 DEERPARK DR STE E
MONMOUTH JUNCTION, NJ, 08852-1921

http://www.unitedsic.com

Information

DUNS: 042068101

# of Employees: 24


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. High Current SiC Cascodes for Electric Drive Vehicle Power Electronics

    Amount: $1,007,789.00

    Advanced power electronics are needed to realize cost and weight reductions which will make electric vehicles as affordable as gasoline powered vehicles. In this program, SiC switches are being develo ...

    SBIRPhase II2017Department of Energy
  2. Silicon Carbide Gate Driver

    Amount: $124,330.00

    NASA needs efficient, low mass, low volume power electronics for a wide variety of applications and missions. Silicon carbide (SiC) switches provide fast, low loss switching, low on-resistance and hig ...

    SBIRPhase I2017National Aeronautics and Space Administration
  3. Extreme Environment Electronics Based on Silicon Carbide

    Amount: $749,645.00

    Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long duration Europa-Jupiter missions will ...

    SBIRPhase II2016National Aeronautics and Space Administration
  4. High Current SiC Cascodes for Electric Drive Vehicle Power Electronics

    Amount: $154,599.00

    In 2014, approximately ~120,000 plug-in electric vehicles (PEV’s) were sold in the US alone, representing a 23% increase from 2013 and a 128% increase from 2012 and nearly 1/3 of the PEV’s sold wo ...

    SBIRPhase I2016Department of Energy
  5. High Current Silicon Carbide Schottky Diodes for Electric Drive Vehicle Power Electronics

    Amount: $1,008,437.00

    The U.S. represents the world’s leading market for electric vehicles and is producing some of the most advanced plugin electric vehicles (PEV’s) available today. PEV’s are gaining widespread ado ...

    SBIRPhase II2016Department of Energy
  6. 6500V-100A SiC JFET-Based Half-Bridge Module

    Amount: $79,848.00

    Over the last decade, tremendous efforts have been invested in developing high voltage SiC power switches. At present, SiC unipolar power switches including MOSFETs and normally-on JFETs have been com ...

    SBIRPhase I2016Department of Defense Navy
  7. High Current SiC Schottky Diodes for Electric Drive Vehicle Power Electronics

    Amount: $154,802.00

    The U.S. represents the worlds leading market for electric vehicles and is producing some of the most advanced plug-in electric vehicles PEVs) available today. PEVs are gaining widespread adoption eve ...

    SBIRPhase I2015Department of Energy
  8. Extreme Environment Electronics based on Silicon Carbide

    Amount: $124,222.00

    Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long duration Europa-Jupiter missions will ...

    SBIRPhase I2015National Aeronautics and Space Administration
  9. Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

    Amount: $749,916.00

    ABSTRACT: During this program, United Silicon Carbide (USCi), Inc. will develop basic analog and digital integrated circuit blocks capable of operation up to 350 oC, based on silicon carbide (SiC) co ...

    SBIRPhase II2014Department of Defense Air Force
  10. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager

    Amount: $745,266.00

    Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a monolithic, solar-blind UV image sens ...

    SBIRPhase II2014National Aeronautics and Space Administration

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